JIANGSU FUMG9N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-05C Digital transistors (built-in resistors)
FUMG9N
TRANSISTOR
WBFBP-05C
(2×2×0.5)
unit: mm
DESCRIPTION
Epitaxial planar type NPN silicon transistor
(Built-in resistor type)
FEATURES
z
Two DTC114E in a package.
z
Mounting cost and area can be cut in half.
1
APPLICATION
Dual Digital Transistors for Inverter Drive
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent circuit
MARKING:G9
G9
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-10~40
V
IO
50
IC(MAX)
100
Power dissipation
Pd
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
Min.
Typ
VI(off)
VI(on)
Max.
0.5
3
Unit
V
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=10 mA
Output voltage
VO(on)
0.3
V
IO/II=10mA/0.5mA
Input current
II
0.88
mA
VI=5V
Output current
IO(off)
0.5
µA
VCC=50V, VI=0
DC current gain
GI
30
Input resistance
R1
7
10
13
Resistance ratio
R2/R1
0.8
1
1.2
Transition frequency
fT
VO=5V ,IO=5mA
250
KΩ
MHz
VCE=10V ,IE=-5mA,f=100MHz
Typical Characteristics
Symbol
A
A1
b
D
E
D1
E1
e
L
k
z
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.000
0.100
0.150
0.250
1.900
2.100
1.900
2.100
0.550 REF.
0.550 REF.
0.650 TYP.
0.500 REF.
0.450 REF.
0.500 REF.
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.006
0.010
0.075
0.083
0.075
0.083
0.022 REF.
0.022 REF.
0.026 TYP.
0.020 REF.
0.018 REF.
0.020 REF.