JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors PCR 0.6 A TO—92 Silicon Planar pnpn Thyristor FEATURES 1.CATHODE Current-IGT :120μA ITRMS : 2.GATE 0.6A 3.ANODE 1 2 3 VDRM : 400V Operating and storage junction temperature range T J ，T stg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified） MIN MAX UNIT On state voltage VTM ITM=0.6A 1.7 V Gate trigger voltage VGTF VAK=7V 0.8 V Repetitive peak off-state voltage VDRM Holding current IH IDRM= 10 μA 400 IHL= 20 mA , Av = 7 V 5 mA A2 5 15 µA A1 15 30 µA 30 45 µA A-2 45 60 µA A 60 80 µA B 80 120 µA A-1 Gate trigger current V IGTF VAR =7V TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015