JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9011 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM : 0.31 W（Tamb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 4 V Collector cut-off current ICBO VCB=16V , IE=0 0.1 μA Collector cut-off current ICBO VCB=16V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 3.5V, IC=0 0.1 μA hFE(1) VCE=5V, IC=1mA DC current gain 28 270 Collector-emitter saturation voltage VCE(sat) IC= 10 mA, IB= 1mA 0.3 V Base-emitter voltage VBE(sat) IC= 10 mA, IB= 1mA 1 V Transition frequency fT VCE=5V,IC=1mA, f=30MHz 150 MHz CLASSIFICATION OF h FE(1) Rank D E F G H I J Range 28-45 39-60 54-80 72-108 97-146 132-198 180-270 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015