SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V (Typ.). : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation PD 100 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Maximum (Peak) Reverse Voltage Surge Current (10ms) Storage Temperature Range C D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H 0.50 J _ 0.05 0.13 + J C MAXIMUM RATING (Ta=25℃) 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G H : CT=0.9pF (Typ.). CHARACTERISTIC D 2 A FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 ESM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking B3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2002. 6. 3 Revision No : 3 1/1