SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + B Q C I D E K FEATURES P M H VDSS=600V, ID=7.5A J I D Drain-Source ON Resistance : RDS(ON)=1.2 F G L J N H N @VGS=10V K 1.46 L _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + M Qg(typ.)= 32.5nC N O 1 2 3 P 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 ) Q RATING VDSS 600 V Gate-Source Voltage VGSS 30 V 4.6 4.6* 30 30* E Tc=25 G 230 mJ L EAR 14.7 mJ D dv/dt 4.5 V/ns M R N 147 48 1.18 0.38 W 1 N H 2 3 PD Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 TO-220IS (1) KHB7D0N60F2 A RthJC 0.85 2.6 C /W F Thermal Resistance, Junction-to-Case RthCS 0.5 - /W E RthJA 62.5 62.5 G B Thermal Resistance, Case-to-Sink P S /W K * : Drain current limited by maximum junction temperature. L L PIN CONNECTION R J M D D D N N 2 H 3 Q 1 G DIM MILLIMETERS A B C D E F G H J K L M N P Q R S _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + 0.5 Typ 1. GATE 2. DRAIN 3. SOURCE TO-220IS S 2007. 5. 10 _ 0.2 4.7 + _ 0.2 2.76 + 1. GATE 2. DRAIN 3. SOURCE W/ Thermal Characteristics Thermal Resistance, Junction-to-Ambient _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + A EAS Derate above 25 MILLIMETERS A B C D E F G H J K L M N O Q R J Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP DIM K @TC=100 Pulsed (Note1) Drain Power Dissipation 7.5* C ID Q Drain Current 7.5 KHB7D0N60F1 A O Drain-Source Voltage @TC=25 TO-220AB KHB7D5N60F1 UNIT KHB7D5N60P1 KHB7D5N60F2 F SYMBOL B CHARACTERISTIC Revision No : 0 1/7 KHB7D5N60P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250 A, Referenced to 25 - 0.7 - Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, VGS=0V V/ Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V Gate Leakage Current IGSS VGS= 30V, VDS=0V - - RDS(ON) VGS=10V, ID=3.75A - 1.0 1.2 - 32.5 43 - 5.5 7.2 - 13.2 14.2 - - 45 - - 130 - - 220 Drain-Source ON Resistance 100 nA Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) VGS=10V (Note4,5) VDD=300V tr Turn-on Rise time VDS=480V, ID=7.5A RL=40 td(off) Turn-off Delay time RG=25 nC ns (Note4,5) Turn-off Fall time tf - - 140 Input Capacitance Ciss - 1363 1550 Output Capacitance Coss - 121.8 140 Reverse Transfer Capacitance Crss - 17 21 - - 7.5 - - 30 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=7.5A, VGS=0V - - 1.5 V Reverse Recovery Time trr IS=7.5A, VGS=0V, - 359 - ns Reverse Recovery Charge Qrr dIs/dt=100A/ s - 3.5 - C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =7.3mH, IS=7.5A, VDD=50V, RG=25 , Starting Tj=25 . Note 3) IS 7.5A, dI/dt 200A/ Note 4) Pulse Test : Pulse width , VDD 300 BVDSS, Starting Tj=25 , Duty Cycle . 2%. Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB7D5N60P1/F1/F2 Fig2. ID - VGS VGS TOP : 15.0 V 10.0 V 8.0 V 1 10 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5V Drain Current ID (A) Drain Current ID (A) Fig1. ID - VDS 0 10 10 1 -55 C 150 C 10 0 25 C -1 10 -1 -1 10 10 0 10 10 1 2 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 2.5 1.1 1.0 0.9 2.0 1.5 VG = 10V VG = 20V 1.0 0.5 0 -50 0 100 50 150 0 5 Junction Temperature Tj ( C ) 10 Normalized On Resistance Reverse Drain Current IS (A) 1 0 10 25 C -1 10 0.4 0.6 0.8 1.0 Source - Drain Voltage VSD (V) 2007. 5. 10 15 20 25 100 150 Fig6. RDS(ON) - Tj 3.0 150 C 10 Drain Current ID (A) Fig5. IS - VSD 0.2 10 Fig4. RDS(ON) - ID VGS = 0V IDS = 250 0.8 -100 8 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 1.2 6 Revision No : 0 1.2 2.5 VGS =10V IDS = 3.75A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 Junction Temperture Tj ( C ) 3/7 KHB7D5N60P1/F1/F2 Fig8. Qg- VGS Fig7. C - VDS Gate - Source Voltage VGS (V) Capacitance (pF) 2000 Ciss 1600 Coss 1200 800 Crss 400 0 12 Frequency = 1MHz 2400 10-1 100 ID=7.5A 10 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 0 101 5 0 Drain - Source Voltage VDS (V) 1ms 10ms 100ms DC 10-1 10 µs 100µs 101 1ms 0 10 10 ms 100 ms -1 DC 10 Tc= 25 C Tj = 150 C Single nonrepetitive pulse Tc= 25 C Tj = 150 C Single nonrepetitive pulse 102 101 Drain Current ID (A) Drain Current ID (A) 10 100µs 102 100 30 (KHB7D5N60F1, KHB7D5N60F2) 10µs 100 25 Operation in this area is limited by RDS(ON) 2 101 20 Fig10. Safe Operation Area (KHB7D5N60P1) Operation in this area is limited by RDS(ON) 15 Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 10 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj Drain Current ID (A) 8 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 4/7 KHB7D5N60P1/F1/F2 Normalized Transient Thermal Resistance Fig12. Transient Thermal Response Curve 100 Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) Normalized Transient Thermal Resistance Fig13. Transient Thermal Response Curve 100 Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 - Duty Factor, D= t1/t2 0.01 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB7D5N60P1/F1/F2 Fig14. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% td(off) 25 Ω VDS td(on) ton 10V 2007. 5. 10 tr tf toff VGS Revision No : 0 6/7 KHB7D5N60P1/F1/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.8 Body Diode Reverse Current VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2007. 5. 10 VGS Revision No : 0 Body Diode Forword Voltage drop 7/7