SEMICONDUCTOR KHB9D5N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + B Q C I D E K P M F G L H FEATURES J I D VDSS=200V, ID=9.5A J N H N Drain-Source ON Resistance : RDS(ON)=400m K 1.46 L _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + M N @VGS = 10V O Qg(typ.)=18.5nC 1 2 3 P 1. GATE 2. DRAIN 3. SOURCE Q TO-220AB MAXIMUM RATING (Tc=25 ) KHB9D5N20F1 RATING C A KHB9D5N20F1 UNIT KHB9D5N20P1 KHB9D5N20F2 O SYMBOL F CHARACTERISTIC V Gate-Source Voltage VGSS 30 V @TC=25 ID 9.5 9.5* Pulsed (Note1) IDP 38 38* A Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Tc=25 180 mJ EAR 8.7 mJ M 1 V/ns 87 40 0.7 0.32 R D N 5.5 N H 2 3 Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 _ 0.2 4.7 + _ 0.2 2.76 + 1. GATE 2. DRAIN 3. SOURCE W PD Derate above25 _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + J EAS dv/dt MILLIMETERS A B C D E F G H J K L M N O Q R TO-220IS (1) W/ KHB9D5N20F2 A Thermal Characteristics C F Drain Power Dissipation L Q Drain Current DIM G 200 K VDSS B E Drain-Source Voltage P S 1.44 3.13 /W Thermal Resistance, Junction-toAmbient RthJA 62.5 62.5 /W E B RthJC K G Thermal Resistance, Junction-to-Case L L PIN CONNECTION R J M D D D N 3 MILLIMETERS A B C D E F G H J K L M N P Q R S _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + 0.5 Typ 1. GATE 2. DRAIN 3. SOURCE TO-220IS S 2007. 5. 10 2 H Q 1 G N DIM Revision No : 0 1/7 KHB9D5N20P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 200 - - V - 0.19 - Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, VGS=0V ID=250 A, Referenced to 25 V/ Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 1 A Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 RDS(ON) VGS=10V, ID=4.75A - 345 400 gFS VDS=40V, ID=4.75A - 6.7 - - 18.5 23 - 2.7 - Drain-Source ON Resistance Forward Transconductance (Note4) nA m S Dynamic Qg Total Gate Charge VDS=160V, ID=9.5A Gate-Source Charge Qgs Gate-Drain Charge Qgd - 9 - Turn-on Delay time td(on) - 11 32 - 62 135 - 46 102 tr Turn-on Rise time (Note4, 5) VDD=100V, RG=25 td(off) Turn-off Delay time VGS=10V ID=9.5A (Note4, 5) ns Turn-off Fall time tf - 80 170 Input Capacitance Ciss - 387 503 Output Capacitance Coss - 96 125 Reverse Transfer Capacitance Crss - 34 45 - - 9.5 - - 38 VDS=25V, VGS=0V, f=1.0MHz nC pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=9.5A, VGS=0V - - 1.5 V Reverse Recovery Time trr IS=9.5A, VGS=0V, - 130 - ns Reverse Recovery Charge Qrr dIs/dt=100A/ s - 0.6 - C (Note 4) Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =3mH, IAS=9.5A, VDD=50V, RG=25 , Starting Tj=25 Note 3) IS 9.5A, dI/dt 300A/ Note 4) Pulse Test : Pulse width , VDD 300 . BVDSS, Starting Tj=25 . , Duty Cycle 2%. Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB9D5N20P1/F1/F2 Fig2. ID - VGS VGS TOP : 15.0 V 10.0 V 8.0 V 1 10 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V VDS = 40V 250µs Pulse Test Drain Current ID (A) Drain Current ID (A) Fig1. ID - VDS 0 10 1 10 150 C 0 10 25 C -55 C -1 10 -1 -1 0 10 10 1 10 10 2 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 2.0 VGS = 0V IDS = 250µA 1.0 0.9 1.5 1.0 0.5 VGS = 20V -50 0 50 100 0 150 20 Fig6. RDS(ON) - Tj Normalized On Resistance Reverse Drain Current IS (A) 15 Fig6. IS - VSD 1 0 10 25 C -1 0.4 10 Drain Current ID (A) 10 150 C 5 Junction Temperature Tj ( C) 3.0 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 2007. 5. 10 VGS = 10V 0 0.8 -100 0.2 10 Fig5. RDS(ON) - ID 1.1 10 8 Gate - Source Voltage VGS (V) Fig4. BVDSS - Tj 1.2 6 Revision No : 0 1.6 1.8 2.5 25 30 VGS = 10V IDS = 5A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/7 KHB9D5N20P1/F1/F2 Fig8. Qg- VGS Fig7. C - VDS 2500 Gate - Source Voltage VGS (V) Capacitance (pF) 2000 Ciss 1500 Coss 1000 Crss 500 0 12 I = 9.5A D Frequency =1MHz 10-1 100 10 VDS = 50V VDS = 125V 8 VDS = 200V 6 4 2 0 101 0 Drain - Source Voltage VDS (V) Drain Current ID (A) Drain Current ID (A) 102 100µs 1ms 10-1 (KHB9D5N20F1, KHB9D5N20F2) Operation in this area is limited by RDS(ON) 100 10ms 100ms DC TC= 25 C Tj = 150 C Single nonrepetitive pulse 100 101 20 Fig10. Safe Operation Area (KHB9D5N20P1) 101 15 10 Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 5 Operation in this area is limited by RDS(ON) 100 µs 101 1 ms 10 0 10 ms 100 ms TC= 25 C Tj = 150 C -1 Single nonrepetitive pulse 10 102 Drain - Source Voltage VDS (V) 100 101 DC 102 Drain - Source Voltage VDS (V) Fig11. ID - Tj 12 Drain Current ID (A) 10 8 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 5. 10 Revision No : 0 4/7 KHB9D5N20P1/F1/F2 Normalized Transient Thermal Resistance Fig12. Transient Thermal Response Curve 100 Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) Normalized Transient Thermal Resistance Fig13. Transient Thermal Response Curve 100 Duty=0.5 0.2 0.1 10-1 PDM 0.05 t1 0.02 t2 0.01 Single Pulse - Duty Factor, D= t1/t2 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB9D5N20P1/F1/F2 Fig14. Gate Charge VGS 10 V Fast Recovery Diode ID ID 0.8 VDSS 1.0 mA VDS Q Qgs Qgd VGS Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS IAS L 0.5 VDSS ID(t) 25Ω VDS VDD 10 V VDS(t) VGS Time tp 2007. 5. 10 Revision No : 0 6/7 KHB9D5N20P1/F1/F2 Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 Ω VDS VGS 10% tf 10V td(on) VGS tr td(off) toff ton Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS ISD (DUT) di/dt IF IRM Body Diode Reverse Current IS 0.8 x VDSS driver VDS (DUT) Body Diode Recovery dv/dt VSD 10V VDD VGS Body Diode Forword Voltage drop 2007. 5. 10 Revision No : 0 7/7