KIC7SZ125FU SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA BUS BUFFER, 3-STATE OUTPUT FEATURES High Output Drive : B 24mA (Typ.) @VCC=3V B1 Super High Speed Operation : tPD=2.6ns(Typ.) @VCC=5V, 50pF 5 1 2 C A A1 C Operation Voltage Range : VCC(opr)=1.8 5.5V. 4 H 3 D T DIM A A1 B B1 C D G H T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 G MAXIMUM RATINGS (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Supply Voltage Range VCC -0.5 6 V DC Input Voltage VIN -0.5 6 V DC Output Voltage VOUT -0.5 6 V Input Diode Current IIK 20 mA Output Diode Current IOK 20 mA DC Output Current IOUT 50 mA DC VCC/Ground Current ICC 50 mA Power Dissipation PD 200 mW Storage Temperature Tstg -65 150 Lead Temperature (10s) TL 260 USV MARKING Type Name T K PIN CONNECTION(TOP VIEW) LOGIC DIAGRAM A G 2004. 5. 3 G 1 IN A 2 GND 3 5 VCC 4 OUT Y OUT Y EN Revision No : 1 1/3 KIC7SZ125FU RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL Supply Voltage VCC Input Voltage VIN RATING 1.8 VOUT Output Voltage Topr Operating Temperature Note1) Data retention only. dt/dv Note2) VCC=0V V 5.5 (Note1) V 5.5 0 5.5 (Note2) 0 VCC (Note3) V -40 85 0 Input Rise and Fall Time 5.5 1.5 0 UNIT 20 (VCC=1.8V, 2.5V 0.2V) 0 10 (VCC=3.3V 0.3V) 0 5 (VCC=5.5V 0.5V) ns/V Note3) H and Low state DC ELECTRICAL CHARACTERISTICS CHARACTERISTIC High-Level Input Voltage Low-Level Input Voltage SYMBOL TEST CONDITION VIH MIN. TYP. MAX. MIN. MAX. 1.8 0.88 VCC - - 0.88 VCC - 2.3 5.5 0.75 VCC - - 0.75 VCC - 1.8 - - 0.12 VCC - 0.12 VCC - - 0.25 VCC - 0.25 VCC 1.8 1.7 1.8 - 1.7 - 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - IOH=-8mA 2.3 1.9 2.15 - 1.9 - IOH=-16mA 3.0 2.4 2.8 - 2.4 - IOH=-24mA 3.0 2.3 2.68 - 2.3 - IOH=-32mA 4.5 3.8 4.2 - 3.8 - 1.8 - 0 0.1 - 0.1 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 4.5 - 0 0.1 - 0.1 IOL=8mA 2.3 - 0.1 0.3 - 0.3 IOL=16mA 3.0 - 0.15 0.4 - 0.4 IOL=24mA 3.0 - 0.22 0.55 - 0.55 IOL=32mA 4.5 - 0.22 0.55 - 0.55 - - 1 - 10 1.8 5.5 - - 1 - 10 5.5 - - - 2.3 5.5 IOH=-100 A High-Level Output Voltage VOH VIN=VIH or VIL IOL=100 A Low-Level Output Voltage VOL VIN=VIH or VIL Input Leakage Current IIN VIN=5.5V or GND 3-state Output off-State Current IOZ VIN=VIH or VIL VOUT=0 5.5V Quiescent Supply Current ICC VIN=VCC or GND 2004. 5. 3 Revision No : 1 Ta=-40 85 VCC(V) - VIL Ta=25 0 5.5 2 - UNIT V V V V A 20 2/3 KIC7SZ125FU AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns) CHARACTERISTIC SYMBOL TEST CONDITION CL=15pF, Propagation Delay Time tPLH tPHL RL=1M (Figure 1) CL=50pF, RL=500 (Figure 1) Ta=25 tPZL Output Enable Time tPZH RL=500 (Figure 1) MIN. TYP. MAX. MIN. MAX. 1.8 2.0 5.3 11.0 2.0 11.5 2.5 0.2 0.8 3.4 7.5 0.8 8.0 3.3 0.3 0.5 2.5 5.2 0.5 5.5 5.0 0.5 0.5 2.1 4.5 0.5 4.8 3.3 0.3 1.5 3.2 5.7 1.5 6.0 5.0 0.5 0.8 2.6 5.0 0.8 5.3 2.0 7.0 12.5 2.0 13.0 2.5 0.2 1.5 4.6 8.0 1.5 9.0 3.3 0.3 1.5 3.5 6.2 1.5 6.5 5.0 0.5 0.8 2.8 5.5 0.8 5.8 2.0 5.4 11.0 2.0 12.0 1.8 tPZL Output Disable Time tPZH CL=50pF, RL=500 (Figure 1) CIN Input Capacitance Power Dissipation CPD Capacitance 85 VCC (V) 1.8 CL=50pF, Ta=-40 2.5 0.2 1.5 3.5 8.0 1.5 8.5 3.3 0.3 1.0 2.8 5.7 1.0 6.0 5.0 0.5 0.5 2.1 4.7 0.5 5.0 - 4 - - - 3.3 - 17 - - - 3.5 - 24 - - - - 0 (Note 1) 5.5 UNIT ns ns ns pF pF Note 1 : CPD defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. ICC(opr)=CPD VCC fIN+ICC Fig. 1 AC CHARACTERISTICS MEASUREMENT CIRCUIT SWITCH RL OUTPUT OPEN VCC x 2 GND MEASURE Characteristics Switch tPLH, tPHL Open tPLZ, tPZL tPHZ, tPZH CL 2004. 5. 3 VCC 2 GND RL Revision No : 1 3/3