SEMICONDUCTOR KMB010P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. H T P D L G FEATURES A VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V 8 5 RDS(ON)=28m (Max.) @ VGS=-4.5V B1 B2 Super High Dense Cell Design 1 MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC 4 Unless otherwise noted) SYMBOL PATING Drain Source Voltage VDSS Gate Source Voltage VGSS -30 25 V V DC ID* -10 A Pulsed IDP -50 A IS -1.7 A P D* 2.0 W Tj 150 Tstg -55~150 RthJA* 62.5 Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 UNIT FLP-8 Drain Current Drain Source Diode Forward Current DIM A B1 B2 D G H L P T KMB010P 30QA /W 709 Note : *Surface Mounted on FR4 Board PIN CONNECTION (TOP VIEW) S 1 8 D S 2 7 D S 3 6 D G 4 5 D 2007. 6. 29 Revision No : 1 1 8 2 7 3 6 4 5 1/4 KMB010P30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT -30 - - V A Static Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250 A Drain Cut-off Current IDSS VDS=-24V, VGS=0V - - -1 Gate Leakage Current IGSS VGS= - - 100 Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1.3 -1.9 -2.5 VGS=-10V, ID=-10A - 12 20 VGS=-4.5V, ID=-8A - 20 28 ID(ON)* VDS=-5V, VGS=-10V -30 - - A Gfs* VDS=-15V, ID=-10A - 14 - S - 2530 - - 635 - 25V, VDS=0V RDS(ON)* Drain-Source ON Resistance On-State Drain Current Forward Transconductance nA V m Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 445 - Total Gate Charge Qg* - 44.6 - Gate-Source Charge Qgs* - 7.7 - Gate-Drain Charge Qgd* - 11.5 - Turn-On Delat Time td(on)* - 10.2 - Turn-On Rise Time tr* VDD=-15V, VGS=-10V - 6.3 - RL=1.25 - 22.5 - - 10.6 - - -0.73 -1.2 VDS=-15V, VGS=0V, f=1MHz VDS=-15V, VGS=-10V, ID=-10A pF nC ns td(off)* Turn-On Deley Time , RG=6 tr* Turn-On Fall Time Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage VGS=0V, IDR=-1.7A, V Note 1. Pulse Test : Pulse width 2007. 6. 29 10 , Duty cycle Revision No : 1 1% 2/2 KMB010P30QA Fig1. ID - VDS Fig2. ID - VGS 25 25 20 Drain Current ID (A) Drain Current ID (A) VGS=10,9,8,7,6,5,4V VGS=3.0V 15 10 5 20 15 10 125 C 5 25 C -55 C 0 0 0 2 4 6 8 10 12 0 2100 1400 Coss 700 Crss On-Resistance RDS(ON) (Ohms) 2800 5 10 15 20 25 30 1.6 1.4 1.2 1.0 0.8 -25 Drain-Source Volatage VDS (V) 0 Reverse Source-Drain Current IDR (A) Normalized Gate Source Threshold Voltage Vth 1.1 1.0 0.9 0.8 0.7 25 50 75 Junction Temperature Tj ( C ) 2007. 6. 29 Revision No : 1 50 75 100 125 Fig 6. IDR - VSDF VGS=VDS ID=-250µA 0 25 Junction Temperature Tj ( C ) Fig5. Vth - Tj -25 3 VGS=-20V ID=-10A 0.6 -55 0 0.6 -50 2.5 Fig4. RDS(ON) - Tj Ciss 1.2 2 Fig3. C - VDS 3500 1.3 1.5 Gate - Source Voltage VGS (V) 1.8 0 1 Drain - Source Voltage VDS (V) 4200 Capacitance (pF) 0.5 100 125 20 VGS=0V 10 1 0.4 0.6 0.7 0.9 1.1 1.3 Source-Drain Forword Voltage VSDF (V) 3/4 KMB010P30QA Fig7. VGS - Qg Fig8. Safe Operation Area 102 VDS=-15V ID=-10A 8 Drain Current ID (A) Gate to Source Voltage VGS (V) 10 6 4 2 101 1ms 10ms 100 100ms Operation in this area is limited by RDS(ON) 1s 10s DC 10-1 VGS= 10V SINGLE PULSE 0 0 8 16 24 32 40 48 56 10-2 10-1 64 100 101 102 103 Drain - Source Voltage VDS (V) Total Gate Charge Qg (nC) Normalized Transient Thermal Resistance Fig9. Transient Thermal Response Curve 100 Duty Cycle = 0.5 PDM 0.2 10-1 t1 0.1 t2 t1 0.05 0.02 10-2 10-4 1. Duty Cycle, D = t2 2. Per Unit Base = RθJA= 62.5 C/W Single Pluse 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration (sec) 2007. 6. 29 Revision No : 1 4/4