SEMICONDUCTOR KMB3D5N40SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter. E B L D L 2 3 G H A FEATURES VDSS=40V, ID=3.5A 1 Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V P P J K Super Hige Dense Cell Design N C RDS(ON)=62m (Max.) @ VGS=4.5V DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS DC@Ta=25 Drain Current ID 20 3.5 2.8 DC@Ta=70 Pulsed IDP 14 Drain-Source-Diode Forward Current IS 1.0 Ta=25 Drain Power Dissipation PD A KN1 A 1.25 W 0.8 Ta=70 Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA 100 Maximum Junction Temperature Note > *Surface Mounted on 1 V 1 FR4 Board, t /W 5sec PIN CONNECTION (TOP VIEW) D 3 3 2008. 2. 19 2 1 G S 2 Revision No : 0 1 1/5 KMB3D5N40SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 40 - - V VGS=0V, VDS=32V - - 0.5 VGS=0V, VDS=32V, Tj=55 - - 10 - - 100 Static Drain-Source Breakdown Voltage BVDSS IDS=250 A, VGS=0V, IDSS Drain Cut-off Current A Gate Leakage Current IGSS VGS= Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 VGS=10V, ID=3.5A - 36 45 VGS=4.5V, ID=3.0A - 56 62 VGS=10V, VDS 6 - - A - 10 - S - 315 - - 69 - 20V, VDS=0V RDS(ON)* Drain-Source ON Resistance ID(ON)* On-State Drain Current gfs* Forward Transconductance 4.5V VDS=10V, ID=3.5A nA V m Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 39 - Total Gate Charge Qg* - 6.4 10 Gate-Source Charge Qgs* - 0.7 - Gate-Drain Charge Qgd* - 2.1 - Turn-On Delat Time td(on)* - 5 10 Turn-On Rise Time tr* VDD=20V, VGS=10V - 12 20 ID=1A, RG=6 - 20 30 - 15 25 - 0.8 1.2 td(off)* Turn-On Deley Time VDS=20V, f=1MHz, VGS=0V VDS=20V, VGS=0V, ID=3.5A tf* Turn-On Fall Time pF nC ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage Note > *Pulse Test : Pulse width <300 2008. 2. 19 VGS=0V, IS=1A V , Duty cycle < 2% Revision No : 0 2/5 KMB3D5N40SA 2008. 2. 19 Revision No : 0 3/5 KMB3D5N40SA 2008. 2. 19 Revision No : 0 4/5 KMB3D5N40SA 2008. 2. 19 Revision No : 0 5/5