SEMICONDUCTOR KTC4075E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). D H G A 2 ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + D ᴌComplementary to KTA2014E. E G H ᴌSmall Package. 0.50 _ 0.05 0.13 + J C J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range 1. EMITTER 2. BASE 3. COLLECTOR ESM Marking Type Name L h FE Rank ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 Ọ A 70 - 700 - 0.1 0.25 V 80 - - MHz - 2.0 3.5 pF - 1.0 10 dB hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1kHz, Rg=10kή Note : hFE Classification O(2):70ᴕ140, Y(4):120ᴕ240, GR(6):200ᴕ400, 2001. 12. 5 Revision No : 1 BL(8):350~700 1/3 KTC4075E h FE - I C I C - V CE 6.0 200 1k COMMON EMITTER Ta=25 C 5.0 3.0 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 240 2.0 160 1.0 120 0.5 80 I B =0.2mA 40 0 0 0 1 2 3 4 5 6 COMMON EMITTER 500 300 100 50 30 VCE =1V 10 0.1 7 0.3 1 COLLECTOR-EMITTER VOLTAGE V CE (V) Ta=25 C Ta=-25 C 0.03 30 100 300 0.01 COMMON EMITTER I C /I B =10 Ta=25 C 5 3 1 0.5 0.3 0.1 0.3 1 3 10 30 100 300 0.3 1 3 10 100 30 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IC I B - V BE 3k 3k COMMON EMITTER V CE =10V Ta=25 C 1k 500 300 100 50 30 10 0.1 0.1 300 COMMON EMITTER VCE =6V 1k 300 100 Ta=1 00 C Ta=2 5 C Ta=25 C TRANSITION FREQUENCY f T (MHz) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 0.05 C BASE CURRENT I B (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 0 =1 Ta 0.1 30 10 3 1 0.3 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 2001. 12. 5 10 0.3 0.1 10 V BE(sat) - I C COMMON EMITTER I C /I B =10 0.5 3 COLLECTOR CURRENT I C (mA) V CE(sat) - I C 1 VCE =6V Ta=100 C Ta=25 C Ta=-25 C Revision No : 1 300 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC4075E h PARAMETER - V CE h PARAMETER - I C GR Y O h PARAMETER h ie xkΩ 50 30 BL Y O GR Y 10 5 3 h fe GR BL h oe xµ O GR O 0.1 0.5 h fe 30 BL 10 BL GR Y O O GR Y Y h re x10 -4 0.3 h re x10 -4 3 5 10 30 50 0.1 0.5 1 h oe xµ BL GR h ie xkΩ 1 BL 1 BL Y O Y COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION PC (mW) GR 100 3 1 0.5 0.3 COMMON EMITTER I C =2mA, Ta=25 C 300 Ω 100 0.1 BL 1k h PARAMETER 1k 500 300 2k COMMON EMITTER VCE =12V, f=270Hz Ta=25 C Ω 2k 3 10 30 O 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta 125 100 125 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2001. 12. 5 Revision No : 1 3/3