SEMICONDUCTOR KTC815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY AMPLIFIER B C FEATURES A Collector-Base Voltage : VCBO=60V. Complementary to KTA539. N K E G ) RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC H F F 1 2 3 C SYMBOL L CHARACTERISTIC MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M MAXIMUM RATING (Ta=25 J D DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 45 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V Collector Cut-off Current ICBO VCB=45V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 0.1 A DC Current Gain Base-Emitter Voltage hFE (Note) VCE=1V, IC=50mA 70 - 240 VBE VCE=1V, IC=10mA 0.6 0.65 0.9 V Collector-Emitter Saturation Voltage VCE(sat) IC=150mA, IB=15mA - 0.15 0.4 V Base-Emitter Saturation Voltage VBE(sat) IC=150mA, IB=15mA - 0.83 1.1 V fT VCE=10V, IC=10mA 100 200 - MHz - 4 - pF Transition Frequency Cob Collector Output Capacitance Note : hFE Classification 2003. 3. 5 O:70~140, VCB=10V, IE=0, f=1MHz Y:120~240 Revision No : 0 1/2 KTC815 h FE - I C 100 I B =250µA 60 I B =200µA 50 I B =150µA 40 30 I B =100µA 20 I B =50µA 10 10 5 15 20 25 30 35 30 3 5 10 30 50 100 300 500 I C - V BE VBE(sat) 0.5 0.3 0.1 VCE(sat) 0.05 0.03 3 10 30 100 100 VCE =1V 10 1 0.1 0 300 0.2 0.4 0.6 0.8 1.0 COLLECTOR CURRENT I C (mA) BASE EMITTER VOLTAGE VBE (V) C ob - VCB Pc - Ta 30 f=1MHz I E =0 10 5 3 1 1 VCE(sat) , V BE(sat) - I C COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR OUTPUT CAPACITANCE C ob (pF) 50 COLLECTOR CURRENT I C (mA) 0.01 3 5 10 30 COLLECTOR BASE VOLTAGE VCB (V) 2003. 3. 5 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 1 300 40 I C =10I B 1 VCE =1V 500 10 0 3 SATURATION VOLTAGE VCE(sat) , VBE(sat) (V) DC CURRENT GAIN h FE I B =300µA 70 0 1K I B =350µA 90 80 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - VCE Revision No : 0 50 1.2 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2