SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement. E MAXIMUM RATING (Ta=25 G ) B CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Q I Collector Current IC 5 Pulse ICP 10 IB 2 A PC 75 W Tj 150 Tstg -55 150 Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range P M L J D DC Base Current K N A H N 1. BASE 2. COLLECTOR DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 3. EMITTER Equivalent Circuit C TO-220AB B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) E SYMBOL IEBO VEB=9V, IC=0 MIN. TYP. MAX. UNIT - - 10 A hFE(1) VCE=5V, IC=1A 18 - 35 hFE(2) VCE=5V, IC=2A 8 - - IC=0.5A, IB=0.1A - - 0.5 IC=2A, IB=0.5A - - 0.6 IC=4A, IB=1A - - 1 IC=1A, IB=0.2A - - - IC=2A, IB=0.5A - - 1.6 Cob VCB=10V, f=1MHz - 65 - pF Transition Frequency fT VCE=10V, IC=0.5A 4 - - MHz Turn-On Time ton - - 0.15 S 150Ω Emitter Cut-off Current TEST CONDITION 2 - 5 S VCC =300V - - 0.8 S IF=2A - - 1.6 V IF=0.4A - 800 - nS IF=1A - 1.4 - S IF=2A - 1.9 - S DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance VCE(sat) VBE(sat) OUTPUT 300µS INPUT tstg Storage Time Fall Time tf Diode Forward Voltage VF *Reverse recovery tims (di/dt=10A/ S) trr IB1=0.4A, IB2=-1A DUTY CYCLE < = 2% V I B1 IB1 IB2 V I B2 *Pulse Test : Pulse Width = 5mS, Duty cycles 10% Note : hFE Classification R : 18~27, O : 23~35 2008. 7. 9 Revision No : 2 1/3 MJE13005D VBE(sat),VCE(sat) - IC DC CURRENT GAIN hFE 100 VCE=1V Ta=125 C -20 C 25 C 10 1 0.01 0.1 1 10 COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat),VCE(sat) (V) hFE - IC 10 IC/IB=10 VBE(sat) 1 VCE(sat) 0.1 0.01 0.01 COLLECTOR CURRENT IC (A) 0.1 Cob - VCB VCE=5V Ta=125 C 25 C -20 C 10 0.1 1 10 COLLECTOR OUTPUT CAPACITANCE Cob (pF) DC CURRENT GAIN hFE 100 1k COMMON EMITTER f=1MHz Ta=25 C 500 300 100 50 30 10 5 3 1 1 3 IC - VCE 30 100 300 1k SWITCHING CHARACTERISTIC 5 10 IB=500mA IB=400mA IB=300mA 4 IB=200mA 3 IB=100mA 2 IB=50mA 1 0 1 2 3 4 5 6 7 8 9 tf 0.1 VCC=300V 0.01 10 COLLECTOR EMITTER VOLTAGE VCE (V) Revision No : 2 tstg 1 IC=5IB1,=-2.5IB2 IB=0V 0 SWITCHING TIME (µS) COLLECTOR CURRENT IC (A) 10 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (A) 2008. 7. 9 10 COLLECTOR CURRENT IC (A) hFE - IC 1 0.01 1 0.1 1 10 COLLECTOR CURRENT IC (A) 2/3 MJE13005D VF - IF 1.6 1.4 1.2 1.0 0.8 1.0 1.5 2.0 FORWARD DIODE VOLTAGE VF (V) REVERSE RECOVERY TIME trr (µS) trr - IF 10 1 0.1 0.01 FORWARD CURRENT IF (A) 0.1 1µs 10µs 1ms 5ms DC 0.1 0.01 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2008. 7. 9 Revision No : 2 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT IC (A) 100 1 10 FORWARD DIODE CURRENT IF (A) PC - Ta SAFE OPERATING AREA 10 1 100 Tc=Ta INFINITE HEAT SINK 80 60 40 20 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) 3/3