SEMICONDUCTOR USFB13A TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D 1 CATHODE MARK Wheeling, and Polarity Protection Applications. APPLICATION I J DIM A Switching Power Supply. MILLIMETERS _ 0.1 1.9 + _ 0.1 2.5 + _ 0.05 0.61 + _ 0.1 0.8 + _ 0.05 0.91 + _ 0.1 1.2 + _ 0.1 1.3 + _ 0.1 0.46 + _ 0.05 0.11 + _ 0.1 0.6 + B C Reversed Battery Connection Protection. D DC/DC Converter. E Cellular Phones. 1. ANODE F 2. CATHODE G H I J MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 30 V IO 1 A IFSM 22 A 830 mW Average Output Rectified Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Power Dissipation PD * Junction Temperature Tj -40 125 Tstg -40 125 Storage Temperature Range USF Marking Lot No. Type Name * Mounted on a glass epoxy board (Soldering land : 6mm 6mm) BA CATHODE MARK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IFM=0.7A - - 0.45 V IFM=1.0A - - 0.52 V VRRM=30V - 5 50 A VR=10V, f=1.0MHz - 40 - pF VFM Peak Forward Voltage Repetitive Peak Reverse Current IRRM Cj Junction Capacitance 2007. 5. 11 ) Revision No : 1 1/2 USFB13A I F - VF IR - Tj 100 REVERSE CURRENT IR (mA) FORWARD CURRENT IF (A) 1000 900 800 700 600 Ta=25 C 500 75 C 400 100 C 300 150 C 200 100 0 10 VR = 30V 1 5V 3V 0.01 0.001 0.0001 0 100 200 300 400 0 500 20 150 100 50 10 15 20 REVERSE VOLTAGE VR (V) Revision No : 1 25 30 Transient themal impedance Rth (j-a) ( C/W ) JUNCTION CAPACITANCE CJ (pF) 200 5 60 80 100 120 140 160 Rth(j-a) - t 250 0 40 JUNCTION TEMPERATURE Tj ( C) CJ - VR 2007. 5. 11 20V 0.1 FORWARD VOLTAGE VF (V) 0 10V 15V 1000 100 10 1 0.001 On glass-epoxy substrate Soldering Land 6mm 6mm 0.01 0.1 1 10 100 1000 Time t (s) 2/2