SEMICONDUCTOR Z02W100V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. WAVE FORM CLIPPER E B L L DIM A FEATURES D B 2 H A G Small Package : SOT-23 3 Sharp breakdown characteristic. C D E 1 G H J P RATING UNIT Power Dissipation PD 200 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Operating Temperature Topr -55 150 J SYMBOL K CHARACTERISTIC P N ) C MAXIMUM RATING (Ta=25 K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 3 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name 10A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V Zener Voltage (Note1) VZ IZ=1mA 95. 0 - 105. 0 Dynamic Impedan (Note2) ZZ IZ=1mA - - 700 IR VR=76V - - 0.2 Reverse Current A (Note 1) VZ is tested with pulsed (40ms) (Note 2) VZ is measured at IZ by given a very small A.C current signal. 2007. 2. 21 Revision No : 0 1/2 Z02W100V PZSM - tw P - Ta PZSM tr 10 1 1µ 10µ 100µ 1m 10m * MOUNTED ON A GLASS EPOXY CIRCUIT BOARD OF 20x20mm PAD DIMENSION OF 4x4mm 200 150 100 50 0 100m 0 PULSE WIDTH TIME tW (S) 10µ 1µ 100n 10n 1n 0 30 60 90 ZENER VOLTAGE VZ (V) 2007. 2. 21 Revision No : 0 75 100 125 150 120 γZ - VZ 140 0.12 TYP. 120 0.11 %/ C 0.10 100 mV/ C 0.09 80 0.08 60 0.07 40 SS 100µ TEMPERATURE COEFFICIENT OF ZENER DIODE γZ (% / C) ZENER CURRENT IZ (A) Ta=25 C TYP. 1m 50 AMBIENT TEMPERATURE Ta ( C) IZ - VZ 10m 25 SS 0 0 40 50 60 70 80 20 90 100 110 120 130 TEMPERATURE COEFFICIENT OF ZENER DIODE γZ (mW / C) REVERSE SURGE POWER DISSIPATION PZSM (W) Ta=25 C Repetitive 100 250 POWER DISSIPATION P (mW) 1K ZENER VOLTAGE VZ (V) 2/2