PHOTOTRANSISTOR AP2012P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE AP2012 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAF1594 REV NO: V.2 DATE: MAR/29/2005 PAGE: 1 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP:1203000140 Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. Typ. Max. Units Test Conditions VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC=100uA Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE=100uA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC=2mA Ee=20mW/cm2 Collector Dark Current - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10％ to 90％ ) - 3 - us TF Fall Time (90％ to 10％ ) - 3 - us 0.1 0.3 - mA VCE = 5V, Ee=1mW/cm2, λ=940nm - 120 - deg - I CEO I (ON) On State Collector Current 2θ1/2 Viewing Angle VCE = 5V IC=1mA RL=1000Ω Absolute Maximum Ratings at TA=25°C Parameter Max.Ratings Collector-to-Emitter Breakdown Voltage 30V Emitter-to-Collector Breakdown Voltage 5V Power Dissipation at (or below) 25°C Free Air Temperature 100mW Operating Temperature Range -40°C ~ +85°C Storage Temperature Range -40°C ~ +85°C SPEC NO: DSAF1594 REV NO: V.2 DATE: MAR/29/2005 PAGE: 2 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP:1203000140 AP2012P3C Recommended Soldering Pattern (Units : mm) Tape Specifications (Units : mm) SPEC NO: DSAF1594 REV NO: V.2 DATE: MAR/29/2005 PAGE: 3 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP:1203000140 AP2012P3C SPEC NO: DSAF1594 REV NO: V.2 DATE: MAR/29/2005 PAGE: 4 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: B.H.LI ERP:1203000140