APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant D SK G Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 215 160 860 ±30 52 5000 30 50 3200 Unit V A V mΩ W A May, 2008 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM45DAG – Rev 3 Symbol VDSS APTM100UM45DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 107.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V Typ 45 3 Max 600 3 52 5 ±600 Unit µA mA mΩ V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 215A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 42.7 7.6 1.3 nF 1602 nC 204 1038 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 215A RG = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 215A, RG = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 215A, RG = 0.5Ω 18 14 140 ns 55 7.2 mJ 4.3 12 mJ 5.8 Series diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1200V Min 1200 Tj = 25°C Tj = 125°C IF = 360A VR = 800V di/dt = 1200A/µs www.microsemi.com Max 600 2000 Tj = 125°C 360 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C 350 Tj = 25°C 3.3 Tj = 125°C 17.3 Tj = 80°C IF = 360A IF = 720A IF = 360A Typ Unit V µA A 3 V May, 2008 IRM Test Conditions ns µC 2–6 APTM100UM45DAG – Rev 3 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTM100UM45DAG Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To Heatsink For teminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.025 0.16 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM100UM45DAG – Rev 3 May, 2008 SP6 Package outline (dimensions in mm) APTM100UM45DAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.03 0.025 0.9 0.02 0.7 0.015 0.5 0.01 0.3 0.005 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 720 540 VGS=15, 10V 7V 420 ID, Drain Current (A) 6.5V 360 300 240 6V 180 120 5.5V 60 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 600 480 360 TJ=25°C 240 120 TJ=125°C 5V 0 0 5 10 15 20 25 30 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 107.5A 1.3 1.2 1.1 VGS=10V VGS=20V 1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 240 RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 0.9 0.8 210 180 150 120 90 60 30 0 0 120 240 360 480 ID, Drain Current (A) 25 50 75 100 125 150 May, 2008 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM100UM45DAG – Rev 3 ID, Drain Current (A) 480 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=107.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 1ms 100 10 0.6 Single pulse TJ=150°C TC=25°C 10ms 1 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss Coss 10000 Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=215A TJ=25°C 12 10 VDS=200V VDS=500V VDS=800V 8 6 4 2 0 0 350 700 1050 1400 1750 2100 Gate Charge (nC) May, 2008 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100UM45DAG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM45DAG APTM100UM45DAG Delay Times vs Current Rise and Fall times vs Current 100 td(off) 120 VDS=670V RG=0.5Ω TJ=125°C L=100µH 90 60 td(on) 30 VDS=670V RG=0.5Ω TJ=125°C L=100µH 80 tr and tf (ns) td(on) and td(off) (ns) 150 60 40 tr 20 0 0 80 120 160 200 240 280 320 360 400 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current VDS=670V RG=0.5Ω TJ=125°C L=100µH 20 16 Eoff 12 VDS=670V ID=215A TJ=125°C L=100µH 36 Eon Switching Energy (mJ) Switching Energy (mJ) 24 8 4 0 30 24 Eoff 18 Eon 12 Eoff 6 0 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) 0 ZCS Hard switching 0 20 50 80 110 140 170 3 4 5 6 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 400 200 2 1000 VDS=670V D=50% RG=0.5Ω TJ=125°C TC=75°C 600 1 Gate Resistance (Ohms) Operating Frequency vs Drain Current 800 Frequency (kHz) tf 200 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM45DAG – Rev 3 May, 2008 ID, Drain Current (A) TJ=150°C 100