Infrared Emitting Diode(GaAlAs) KEM5001R Dimensions The KEM5001R is GaAlAs infrared emitting diode [Unit : mm] that is designed for high power, low forward voltage. at emission wavelength 870nm and has a high radiant efficiency over a wide range of forward current. 0.085 0.45 0.80 3.70±0.1 Features 870nm wavelength 2.30±0.1 1.15 This device is optimized for speed and efficiency 0.70 2.60 * PIN Description 2.50 Low forward voltage High power and high reliability ANODE CATHODE 0.70 Available for pulse operating Surface Mountable Leadless Package Applications IR Audio and Telephone IR Communication Optical Switch Available for Wireless Digital Data Transmission [TA = 25 Absolute Maximum Ratings Parameter Symbol Rating Unit Power Dissipation PD 95 mW Forward Current IF 50 mA Pulse Forward Current *1 IFP 1 A Reverse Voltage VR 5 V Operating Temperature Topr. -25~+85 Storage Temperature Tstg. -25~+100 Soldering Temperature *2 Tsol 260 ] *1. Duty ratio=1/100, pulse width=0.1ms *2. MAX 5sec [TA = 25 Electro-Optical Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit. Forward Voltage VF IF=50㎃ - 1.6 1.9 V Reverse Voltage VR IR=10uA 4 - - V Radiant intensity PO IF=50㎃ 13 16 - ㎽/sr p IF=20㎃ - 870 - nm IF=20㎃ - 45 - nm Half Angle Θ1/2 IF=30mA - ±20 - deg. Rise Time Tr IF=50mA - 15 - ns Peak Emission Wavelength Spectral Bandwidth 50% -1- ] Infrared Emitting Diode(GaAlAs) KEM5001R Forward Current Vs Forward Voltage Forward Current Vs Ambient Temperature 70 Forward Current IF [mA] Forward Current IF [mA] 80 110 100 90 80 70 60 50 40 30 20 10 0 60 50 40 30 20 10 0 -20 0 1 2 Forward Voltage [V] 3 0 20 40 60 80 100 Ambient Temperature Ta [℃] Relative Intensity Vs Wavelength Radiant Intensity Vs Forward current 1.2 1000 0.8 Radiant Intensity Po [mW/Sr] 0.6 0.4 0.2 0 600 700 800 900 1000 Wavelength λ[nm] 100 10 1 1100 1 10 100 1000 Forward Current IF [mA] Radiant Angle 10000 Pulse Current Vs Duty Ratio Angle(deg.) 10000 [Pulse ≤100㎲ Pulse Current [mA] Relative Intensity 1 Ta=25℃] 1000 100 10 0 -2- 1 10 Duty Ratio [%] 100