KODENSHI KK100-6

KK100-6
Sensitive Gate Silicon Controlled Rectifiers
Features
◇ Repetitive Peak Off-State Voltage : 400V
◇ R.M.S On-State Current (IT(RMS)=0.8 A)
◇ Low On-State Voltage (1.2V(Typ.)@ITM)
General Description
Sensitive triggering SCR is suitable for the application
where gate current limited such as small motor control,
gate driver for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
Condition
Ratings
Units
400
V
VDRM
Repetitive Peak Off-state Voltage
IT(AV)
Average On-State Current
Half Sine Wave : TC =74℃
0.5
A
IT(RMS)
R.M.S On-State Current
All Conduction Angle
0.8
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave NonRepetitive
10
A
I2 t
I²t for Fusing
t = 8.3ms
0.415
A² S
PGM
Forward Peak Gate Power
Dissipation
2
W
0.1
W
PG(AV)
Forward Average Gate Power
Dissipation
IFGM
Forward Peak Gate Current
1
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
TSTG
Operating Junction Temperature
-40
~
125
℃
Storage Temperature
-40
~
150
℃
1
KK100-6
Electrical Characteristics
Ratings
Symbol
Items
Conditions
VAK=VDRM,
IDRM
Repetitive Peak OffState Current
VTM
Peak On-State
Voltage(1)
IGT
Gate Trigger
Current(2)
VGT
Gate Trigger
Voltage(2)
VGD
Non-Trigger Gate
Voltage(1)
Unit
or VRRM:RGK=1000Ω
Tc=25℃
Tc=125℃
(ITM=1A, Peak)
Min
Typ
Max
━
━
━
━
10
200
㎂
1.7
V
━
1.2
VAK=6V, RL=100Ω
Tc=25℃
Tc=-40℃
━
━
━
━
200
500
㎂
Tc=25℃
Tc=-40℃
━
━
━
━
0.8
1.2
V
VD=7V, RL=100Ω
VAK=12V, RL=100Ω
Tc=125℃
0.2
━
━
V
500
800
━
V/㎲
━
━
50
A/㎲
5.0
10
mA
VD=Rated VDRM, Exponential waveform RGK=1000Ω TJ=125℃
dv/dt
Critical Rate of Rise
Off-State Voltage
di/dt
Critical Rate of Rise
Off-State Voltage
IPK=20A ;
lgt=20mA
Holding Current
VAK=12V, Gate Open
Initiating Current=20mA Tc=25℃
Tc=-40℃
Rth(j-c)
Thermal
Impedance
Junction to case
━
━
60
℃/W
Rth(j-a)
Thermal
Impedance
Junction to Ambient
━
━
150
℃/W
IH
PW=10㎲;diG/dt=1A/㎲
━
━
2
━
※ Notes :
1. Pulse Width ≤1.0ms, Duty cycle ≤1%
2. Does not include RGK in measurement.
2
KK100-6
3
KK100-6
4
KK100-6
• TO-92
5