LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter 1 2 SC-89 resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. ƽSimplifies Circuit Design ƽReduces Board Space PIN 1 BASE (INPUT) ƽReduces Component Count ƽThe SC-89 Package can be Soldered using Wave or Reflow. PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) ƽAvailable in 8 mm, 7inch/3000 Unit Tape & Reel ƽThis is Pb-Free Device. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 6H SC-89 (Pb-Free) 3000/Tape&Reel LDTA123EET1G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MARKING DIAGRAM Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 200 (Note 1) 300 (Note 2) 1.6 (Note 1) 2.4 (Note 2) mW Rating Collector Current 3 XX M 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C xx M 2 = Specific Device Code = Date Code mW/°C Thermal Resistance – Junction-to-Ambient RθJA 400 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Version 1.0 LDTA123EET1-1/3 LESHAN RADIO COMPANY, LTD. LDTA123EET1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0 ) IEBO Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) Characteristic Max Unit – 100 nAdc – 500 nAdc – – 2.3 mAdc V(BR)CBO 50 – – Vdc V(BR)CEO 50 – – Vdc hFE 8.0 15 – VCE(sat) – – 0.25 Vdc OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) VOL – – 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) VOH 4.9 – – Vdc Input Resistor R1 1.5 2.2 2.9 kΩ Resistor Ratio R1/R2 0.8 1 1.2 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 −50 RqJA = 600°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Version 1.0 LDTA123EET1-2/3 LESHAN RADIO COMPANY, LTD. LDTA123EET1 SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS Version 1.0 LDTA123EET1-3/3