SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - NOVEMBER 1995 FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA FMMT6520 ✪ E C APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS B COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL 520 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -350 Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb= 25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -350 V IC=-100µA, IE=0 V(BR)CEO -350 V IC=-1mA, IB=0* V(BR)EBO -5 Cut-Off Currents MAX. V IE=-10µA, IC=0 ICBO -50 nA VCB=-250V, IE=0 IEBO -50 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.35 -0.5 -1.0 V V V V IC=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* IC=-50mA, IB=-5mA* Base-Emitter Saturation Voltage VBE(sat) -0.75 -0.85 -0.90 V V V IC=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* Base-Emitter Turn-On Voltage VBE(on) -2.0 V IC=-100mA, VCE=-10V* Static Forward Current Transfer Ratio hFE Output Capacitance Cobo Transition Frequency fT 20 30 30 20 15 IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* 200 200 6 50 pF VCB=20V, f=1MHz MHz IC=-10mA, VCE=-20V, f=20MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 172