MIMIX 14TX0614

10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
Features
Chip Device Layout
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Integrated Mixer, LO Buffer and Output Amplifier
8 dB Conversion Gain
15 dB Image Rejection
+17 dBm OIP3
+6 dBm LO Drive Level
-12 dBm LO Leakage Power
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
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Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
pr
od
Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17
dBm output third order intercept and 15 dB image rejection across the
band. This device is an image reject, balanced mixer followed by a two
stage output amplifier. The image reject mixer reduces the need for
unwanted sideband filtering before the power amplifier. I and Q mixer
inputs are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband’s 0.15
µm GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity. The chip
has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This device is well suited
for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
+6.0 VDC
250,150,250 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table 1
MTTF Table 1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Pr
e-
Frequency Range (RF) Upper Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (PLO)
Isolation LO/RF
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd1,2,3)
Source Bias Voltage (Vs1)
Gate Bias Voltage (Vg1), Mixer
Gate Bias Voltage (Vg2,3)
Supply Current (Id1) (Vd1=5.0V)
Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical)
Supply Current (Id3) (Vd3=5.0V, Vg=-0.1V Typical)
Supply Current (Iss) (Vss=-5.0V)
Units
GHz
GHz
GHz
dB
dB
dBm
dB
dBm
VDC
VDC
VDC
VDC
mA
mA
mA
mA
Min.
10.0
7.0
DC
-1.2
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Typ.
18.0
9.0
+6.0
18.0
+17.0
+5.0
-5.0
-0.6
-0.1
140
70
140
140
Max.
18.0
21.0
3.0
+5.5
+0.1
200
100
200
200
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
Transmitter Measurements
C onv. G ain / Image R ejecti on
LSB, IF = 2 G Hz, LO = +6 dBm
20
15
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
Conv. G ain
-40
Image Rej ect
-45
-50
10
5
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Conv . Ga in (dB) / Image Re jection (dBc)
Conv . Ga in (dB) / Image Re jection (dBc)
C onv. G ain / Image R ejecti on
USB, IF = 2 G Hz, LO = +6 dBm
20
0
-5
-10
-15
-20
-25
-30
-35
LSB Conv G ain
-40
Image Re ject
-45
-50
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
8
9
10
11
12
13
R F ( GHz )
16
17
18
19
20
21
22
uc
US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,
+6 dBm a nd +8 dBm , 3 0 May 2005: OIP3 avg (dBm ) vs . RF (GHz )
30
od
30
25
25
15
10
(dBm)=4, RC=R1
(dBm)=4, RC=R1
(dBm)=4, RC=R1
(dBm)=4, RC=R1
(dBm)=6, RC=R1
(dBm)=6, RC=R1
(dBm)=6, RC=R1
(dBm)=6, RC=R1
(dBm)=8, RC=R1
(dBm)=8, RC=R1
0C6
1C5
1C7
2C4
0C6
1C5
1C7
2C4
0C6
1C5
OIP3, PL O (dBm)=8, RC=R1 1C7
OIP3, PL O (dBm)=8, RC=R1 2C4
0
-5
8
9
10
11
12
13
14
15
16
17
18
19
21
10
Pr
8
20
15
10
OIP3, PL O (dBm)=8, RC=R1 1C7
OIP3, PL O (dBm)=8, RC=R1 2C4
9
10
11
12
13
14
15
16
17
18
19
20
21
22
RF (G Hz)
US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,
+6 dBm a nd +8 dBm , 3 0 May 2005: IIP3 avg (dBm ) vs . RF (GHz )
30
25
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
(dBm)=4, R C =R 10C6
(dBm)=4, R C =R 11C5
(dBm)=4, R C =R 11C7
(dBm)=4, R C =R 12C4
(dBm)=6, R C =R 10C6
(dBm)=6, R C =R 11C5
(dBm)=6, R C =R 11C7
(dBm)=6, R C =R 12C4
(dBm)=8, R C =R 10C6
(dBm)=8, R C =R 11C5
IIP3, PL O (dBm)=8, R C =R 11C7
IIP3, PL O (dBm)=8, R C =R 12C4
5
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
IIP3, PL O
20
IIP3 av g (dBm)
25
0C6
1C5
1C7
2C4
0C6
1C5
1C7
2C4
0C6
1C5
-5
22
L S B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,
+6 dBm a nd +8 dBm , 3 0 May 2005: IIP3 avg (dBm ) vs . RF (GHz )
30
(dBm)=4, RC=R1
(dBm)=4, RC=R1
(dBm)=4, RC=R1
(dBm)=4, RC=R1
(dBm)=6, RC=R1
(dBm)=6, RC=R1
(dBm)=6, RC=R1
(dBm)=6, RC=R1
(dBm)=8, RC=R1
(dBm)=8, RC=R1
0
e-
RF (G Hz)
20
15
5
pr
5
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
20
OIP3 a vg (dBm)
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
OIP3, PL O
20
OIP3 a vg (dBm)
15
R F ( GHz )
L S B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,
+6 dBm a nd +8 dBm , 3 0 May 2005: OIP3 avg (dBm ) vs . RF (GHz )
IIP3 av g (dBm)
14
15
10
(dBm)=4, R C =R 10C6
(dBm)=4, R C =R 11C5
(dBm)=4, R C =R 11C7
(dBm)=4, R C =R 12C4
(dBm)=6, R C =R 10C6
(dBm)=6, R C =R 11C5
(dBm)=6, R C =R 11C7
(dBm)=6, R C =R 12C4
(dBm)=8, R C =R 10C6
(dBm)=8, R C =R 11C5
IIP3, PL O (dBm)=8, R C =R 11C7
IIP3, PL O (dBm)=8, R C =R 12C4
5
0
0
-5
-5
8
9
10
11
12
13
14
15
16
RF (GH z)
17
18
19
20
21
22
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
RF (GH z)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
Transmitter Measurements (cont.)
L S B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,
+6 dB m a nd +8 dB m, 30 May 2005: LO ISO ( dB) vs . RF (GH z)
US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,
+6 dB m a nd +8 dB m, 30 May 2005: LO ISO ( dB) vs . RF (GH z)
0
0
-5
-5
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
L O IS O (dB)
-20
-25
-30
-35
-40
O
O
O
O
O
O
O
O
O
O
(dBm)=4, R C =R10C6
(dBm)=4, R C =R11C5
(dBm)=4, R C =R11C7
(dBm)=4, R C =R12C4
(dBm)=6, R C =R10C6
(dBm)=6, R C =R11C5
(dBm)=6, R C =R11C7
(dBm)=6, R C =R12C4
(dBm)=8, R C =R10C6
(dBm)=8, R C =R11C5
LO/R F, PL O (dBm)=8, R C =R11C7
LO/R F, PL O (dBm)=8, R C =R12C4
-45
-15
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
LO/R F, PL
-20
L O IS O (dB)
-15
-25
-30
-35
-40
-50
-55
-55
-60
-60
8
9
10
11
12
13
14
15
16
17
18
19
20
21
8
22
O
O
O
O
O
O
O
O
O
O
(dBm)=4, R C =R10C6
(dBm)=4, R C =R11C5
(dBm)=4, R C =R11C7
(dBm)=4, R C =R12C4
(dBm)=6, R C =R10C6
(dBm)=6, R C =R11C5
(dBm)=6, R C =R11C7
(dBm)=6, R C =R12C4
(dBm)=8, R C =R10C6
(dBm)=8, R C =R11C5
LO/R F, PL O (dBm)=8, R C =R11C7
LO/R F, PL O (dBm)=8, R C =R12C4
-45
-50
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-10
-10
9
RF ( GHz )
10
11
12
13
14
15
16
17
18
19
20
21
22
Pr
e-
pr
od
uc
RF ( GHz )
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
Mechanical Drawing
0.569
(0.022)
1.169
(0.046)
1.968
(0.077)
2.368
(0.093)
2
3
4
5
6
2.200
(0.087)
7
1.100
(0.043)
11
10
9
0.569
(0.022)
1.169
(0.046)
1.968
(0.077)
12
0.0
0.169
(0.007)
uc
1
0.0
1.824
(0.072)
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0.169
(0.007)
8
2.368
(0.093)
3.200
(0.126)
od
(Note: Engineering designator is 14TX0614)
Bond Pad #1 (LO)
Bond Pad #2 (Vg1)
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Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.36 mg.
Bond Pad #3 (Vd1A)
Bond Pad #4 (IF1)
Vd1A
Vg1
e-
Bias Arrangement
Bond Pad #5 (Vg2)
Bond Pad #6 (Vg3)
Bond Pad #7 (RF)
Bond Pad #8 (Vd3)
Bond Pad #9 (Vd2)
Bond Pad #10 (IF2)
Bond Pad #11 (Vd1B)
Bond Pad #12 (Vg1)
Bypass Capacitors - See App Note [2]
Vg2,3
IF1
3
4
5
6
Pr
2
LO
7
RF
1
12
11
10
9
8
IF2
Vg1
Vd2,3
Vd1B
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
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App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd(1,2,3)=5.0V,
Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA and Is1=140mA. Additionally, a mixer is also required with Vg1=-0.6V.
Adjusting Vg1 above or below this value can adversely affect conversion gain, LO/RF isolation and intercept point
performance. Gain control can be adjusted by varying Vg2,3 from 0.0 to -1.2 V with 0.0V providing minimum
attenuation and -1.2 V providing maximum attenuation. It is also recommended to use active biasing to keep the
currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the
pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this
is -0.2V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
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App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or
gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also
recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.
od
For Individual Stage Bias -- Each DC pad (Vd1,2,3, Vss, and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pF)
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
55 deg Celsius
Rth
MTTF Hours
FITs
deg Celsius
C/W
E+
E+
deg Celsius
C/W
E+
E+
C/W
E+
E+
e-
75 deg Celsius
Channel
Temperature
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Backplate
Temperature
95 deg Celsius
deg Celsius
Pr
Bias Conditions: Vd1=Vd2=Vd3=5.0V, Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA, Is1=140mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
App Note [3] USB/LSB Selection -
LSB
USB
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For Upper Side Band operation (USB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (180º)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
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IF2
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (180º)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
od
IF1
An alternate method of Selection of USB or LSB:
pr
USB
Pr
-180º
In Pha s e Co mbiner
e-
In Pha s e Co mbiner
LSB
IF2
-180º
IF1
IF2
IF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
Pr
e-
pr
od
uc
tio
n
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-18.0 GHz GaAs MMIC
Transmitter
14TX0614
September 2005 - Rev 01-Sep-05
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
tio
n
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
uc
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
od
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Pr
e-
pr
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided). The work station temperature should be 310 C +- 10 C. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.