10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias 100% RF, DC and Output Power Testing General Description Mimix Broadband’s two stage 10.0-21.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 17.0 dB with a +19.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage with broadband performance at a very low cost. The device comes in an RoHS compliant 3x3mm QFN surface mount package offering excellent RF and thermal properties. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 180 mA +0.3 VDC +20.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Drain Bias Voltage (Vd) Gate Bias Voltage (Vg) Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical) Units GHz dB dB dB dB dB dB dBm dBm dBm VDC VDC mA Min. 10.0 -1.0 - Typ. 12.0 12.0 17.0 +/-2.0 65.0 4.5 +19.0 +20.0 +32.0 +4.0 -0.1 90 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Max. 21.0 +5.5 0.0 - Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Buffer Amplifier Measurements XB1008-QT, Vd = 4V, Id = 100 mA: Small Signal Gain vs Frequency 20 -2 18 -4 16 -6 14 -8 12 S21 (dB) S11 (dB) XB1008-QT, Vd = 4V, Id = 100 mA: Input Return Loss vs Frequency 0 -10 -12 10 8 -14 6 -16 4 -18 2 -20 0 5 7 9 11 13 15 17 19 21 23 5 25 7 9 11 13 17 19 21 23 25 XB1008-QT: OIP3 vs Frequency. 4V, 90 mA, Pin = -15dBm XB1008-QT, Vd = 4V, Id = 100 mA: Output Return Loss vs Frequency 0 35 -5 30 -10 OIP3 (dBm) S22 (dB) 15 Frequency (GHz) Frequency (GHz) -15 25 20 -20 15 -25 5 7 9 11 13 15 17 19 21 23 25 Frequency (GHz) 10 10 11 12 13 14 15 16 17 18 19 20 21 Frequency (GHz) XB1008-QT: OIP3 vs Frequency. 4V, 20 - 100mA, Pin = -15dBm XB1008-QT: Output Power. Vd = 4V, Id = 100mA 22 35 20 30 18 OIP3 (dBm) 25 20 15 10 16 Power out (dBm) Id av(mA)=20 Id av(mA)=30 Id av(mA)=40 Id av(mA)=50 Id av(mA)=60 Id av(mA)=70 Id av(mA)=80 Id av(mA)=90 Id av(mA)=100 11 GHz 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 17 GHz 18 GHz 19 GHz 20 GHz 21 GHz 14 12 10 8 6 4 5 2 0 0 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 21 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Pin (dBm) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Buffer Amplifier Measurements (cont.) XB1008-QT: Power out vs Frequency. Vd = 4V and Id = 100mA 22 20 18 Power out (dBm) 16 Pin = -10 dBm Pin = -8 dBm Pin = -6 dBm Pin = -4 dBm Pin = -2 dBm Pin = 0 dBm Pin = 2 dBm Pin = 4 dBm Pin = 6 dBm Pin = 8 dBm Pin = 10 dBm 14 12 10 8 6 4 2 0 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Freq (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Package Dimensions / Layout Note: All unused GND pins should be tied to center ground on application board for best thermal conductivity. Functional Block Diagram gnd gnd gnd VD 1 6 1 5 1 4 1 3 Pin Designations gnd 1 12 gnd gnd 2 11 gnd 3 10 RF Out 4 9 gnd RF In gnd 5 6 7 8 VG gnd gnd gnd Pin Number Pin Name Pin Function Nominal Value 1-2 GND Ground 3 RF In RF Input 4 GND Ground 5 VG Gate Bias -0.5V 6-9 GND Ground 10 RF Out RF Output 11-12 GND Ground 13 VD 4.5V, 130 mA Drain Bias 14-16 GND Ground Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at Vd=4V with Id=90 mA. It is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. MTTF Graphs These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. XB1008-QT Vd=4.0 V Id=130 mA 1.00E+04 1.00E+08 1.00E+03 FITS MTTF (hours) XB1008-QT Vd=4.0 V Id=130 mA 1.00E+09 1.00E+07 1.00E+06 1.00E+02 1.00E+01 1.00E+05 1.00E+00 55 65 75 85 95 105 Backplate Temperature (deg C) 115 125 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.