12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing General Description Mimix Broadband’s three stage 12.0-27.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 16.0 dB with a +22.0 dBm P1dB output compression point across much of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 3x3mm QFN Surface Mount Package offering excellent RF and thermal properties. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 90, 260 mA +0.3 VDC +12.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1dB Compression (P1dB) 2 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd=5.0V, Vg=-0.6V Typical) Supply Current (Id2) (Vd=5.0V, Vg=-0.6V Typical) Units GHz dB dB dB dB dB dB dBm VDC VDC mA mA Min. 12.0 -1.0 - Typ. 10.0 10.0 16.0 +/-3.0 45.0 5.0 +22.0 +5.0 -0.6 60 180 Max. 27.0 +5.5 0.0 75 220 (2) Measured using constant current. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Buffer Amplifier Measurements XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA 24 0 22 -10 20 Reverse Isolation (dB) 18 Gain (dB) 16 14 12 10 8 6 -20 -30 -40 -50 -60 4 -70 2 0 -80 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) +90 Deg C -40 Deg C Frequency (GHz) +25 Deg C +90 Deg C -40 Deg C +25 Deg C XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA 0 0 -5 Output Return Loss (dB) Input Return Loss (dB) -5 -10 -15 -20 -25 -30 -10 -15 -20 -35 -25 -40 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 *Includes fixture losses *Includes fixture losses Frequency (GHz) +90 Dec C -40 Deg C 9.0 25 8.0 24 7.0 23 Noise Figure (dB) Output Power P1dB (dBm) -40 Deg C +25 Deg C XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA 26 22 21 20 19 6.0 5.0 4.0 3.0 2.0 18 1.0 17 16 17.0 Frequency (GHz) +90 Deg C +25 Deg C 18.0 19.0 20.0 21.0 22.0 -40 Deg C 24.0 0.0 17.0 18.0 *Includes fixture losses Frequency (GHz) +85 Deg C 23.0 +25 Deg C 19.0 20.0 21.0 22.0 23.0 24.0 Frequency (GHz) +90 Deg C Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com -40 Deg C +25 Deg C Page 2 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Buffer Amplifier Measurements (cont.) XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA 30 60 28 27 17.0 GHz 26 18.0 GHz 19.0 GHz 25 20.0 GHz 24 21.0 GHz 22.0 GHz 23 23.0 GHz 24.0 GHz 22 Output Third Order Intermods (dBc) Output Third Order Intercept (dBm) 29 55 17.0 GHz 50 18.0 GHz 19.0 GHz 45 20.0 GHz 21.0 GHz 22.0 GHz 40 23.0 GHz 24.0 GHz 35 21 20 30 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 -2 -1 0 1 2 Total Output Power (dBm) 30 47 29 46 28 27 26 25 24 23 22 21 18.0 *Includes fixture losses 19.0 20.0 21.0 22.0 Frequency (GHz) +95 Deg C -15 Deg C 4 5 6 7 8 9 10 11 12 13 XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA Pout=+3 dBm SCL Output Third Order Intermods (dBc) Output Third Order Intercept (dBm) XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA Pout=+3 dBm SCL 20 17.0 3 Total Output Power (dBm) 23.0 24.0 45 44 43 42 41 40 39 38 37 17.0 18.0 *Includes fixture losses +25 Deg C 19.0 20.0 21.0 22.0 23.0 24.0 Frequency (GHz) +95 Deg C Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com -15 Deg C +25 Deg C Page 3 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Buffer Amplifier Measurements (cont.) XB1009-QT Vd=See Legend, Id1=60 mA, Id2=180 mA XB1009-QT Vd=See Legend, Id1=60 mA, Id2=180 mA 24 25 22 24 20 23 Output Power P1dB (dBm) 18 Gain (dB) 16 14 12 10 8 6 4 22 21 20 19 18 17 16 2 0 15 17.0 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Vd1,2=4.5V 19.0 Vd1,2=6.5V 20.0 21.0 22.0 23.0 24.0 25.0 Frequency ( GHz) Vd1,2=4.5V Vd1,2=6.5V XB1009-QT Vd=See Legend, Id1=60 mA, Id2=180 mA XB1009-QT Vd=See Legend, Id1=60 mA, Id2=180 mA 0 0 -5 -5 Output Return Loss (dB) Input Return Loss (dB) 18.0 *Includes fixture losses -10 -15 -20 -10 -15 -20 -25 -25 -30 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 *Includes fixture losses Frequency (GHz) Vd1,2=4.5V Vd1,2=6.5V 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 *Includes fixture losses Frequency (GHz) Vd1,2=4.5 V Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Vd1,2=6.5 V Page 4 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Package Dimensions/Layout QT Functional Block Diagram/Board Layout Pin Description 1,2 Ground 3 RF Input 4 Ground 5 Vg1 6 Vg2 7,8 Ground 9 Ground 10 RF Output 11,12 Ground 13 Vd2 14 Vd1 15,16 Ground Bypass Capacitors - See App Note [2] XB1009-QT Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd2 at Vd(1,2)=5.0V with Id1=60 mA and Id2=180 mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=240 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.6V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 MTTF Tables (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature Channel Temperature Rth MTTF Hours FITs 55 deg Celsius Deg Celsius C/W E+ E+ 75 deg Celsius Deg Celsius C/W E+ E+ 95 deg Celsius Deg Celsius C/W E+ E+ Bias Conditions: Vd1,2=5.0V, Id1=60 mA, Id2=180 mA Typical Application XB1004-QC, or XB1009-QT XU1002-QD XP1022-QF Sideband Reject IF IN 2.0 GHz RF Out 17.7-19.7 GHz LO(+2.0dBm) 7.85-8.85 GHz (USB Operation) 9.85-10.85 GHz (LSB Operation) Mimix Broadband MMIC-based 18.0-25.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 25.0 GHz) Mimix Broadband's 18.0-25.0 GHz XU1002 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from 18.0-25.0 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible with high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place this part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and life of the product due to thermal stress. Typical Reflow Profiles Reflow Profile Ramp Up Rate Activation Time and Temperature Time Above Melting Point Max Peak Temperature Time Within 5 ºC of Peak Ramp Down Rate SnPb 3-4 ºC/sec 60-120 sec @ 140-160 ºC 60-150 sec 240 ºC 10-20 sec 4-6 ºC/sec Pb Free 3-4 ºC/sec 60-180 sec @ 170-200 ºC 60-150 sec 265 ºC 10-20 sec 4-6 ºC/sec Factory Automation and Identification Mimix Designator Package Type Number of leads offered W Tape Width P1 Component Pitch P0 Hole Pitch Reel Diameter Units per Reel -QT QFN (3x3mm) 16 12mm 8mm 4mm 329mm (13in) 2000 Component Orientation: Parts are to be oriented with the PIN 1 closest to the tape's round sprocket holes on the tape’s trailing edge. Note: Tape and Reel packaging is ordered with a -000T suffix. Package is available in 500 unit reels through designated sales channels. Minimum order quantities should be discussed with your local sales representative. Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is 100% matt tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as well as higher temperature (260°C reflow) “Pb Free” processes. Part Number for Ordering XB1009-QT-0G00 XB1009-QT-EV1 Description Matte Tin plated RoHS compliant 3x3 16L QFN surface mount package in bulk quantity XB1009-QT evaluation board We also offer this part with SnPb (Tin-Lead) or NiPdAu plating. Please contact your regional sales manager for more information regarding different plating types. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 8 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.