MIMIX XP1013-BD

17.0-26.0 GHz GaAs MMIC
Power Amplifier
P1013-BD
August 2007 - Rev 08-Aug-07
Features
Excellent Saturated Output Stage
Competitive RF/DC Bias Pin for Pin Replacement
20.0 dB Small Signal Gain
+24.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
XP1013-BD
General Description
Mimix Broadband’s three stage 17.0-26.0 GHz GaAs
MMIC power amplifier has a small signal gain of 20.0
dB with a +24.0 dBm saturated output power. This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
650 mA
+0.3 VDC
+5.0 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table 1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=6.0V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
Min.
17.0
-1.0
-
Typ.
10.0
10.0
20.0
+/-2.0
50.0
+24.0
+6.0
-0.7
320
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Max.
26.0
+8.0
0.0
480
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-26.0 GHz GaAs MMIC
Power Amplifier
P1013-BD
August 2007 - Rev 08-Aug-07
Power Amplifier Measurements
S21
S12
30
-40
20
-60
0
-80
-20
-100
DB(|S[2,1]|)
All Sources
-40
0.045
10
20
30
Frequency (GHz)
DB(|S[1,2]|)
All Sources
40
-120
0.045
50
10
S11
20
30
Frequency (GHz)
40
50
S22
0
0
-5
-5
-10
-10
DB(|S[1,1]|)
All Sources
-15
-15
DB(|S[2,2]|)
All Sources
-20
-20
-25
0.045
10
20
30
Frequency (GHz)
40
50
-25
0.045
10
20
30
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
40
50
Page 2 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-26.0 GHz GaAs MMIC
Power Amplifier
P1013-BD
August 2007 - Rev 08-Aug-07
Power Amplifier Measurements (cont.)
XP1013-BD_R4C2 (Vd1 = 6.0V, Id1 = 50mA, Vd2 = 6.0V, Id2 = 90mA, Vd3 = 6.0V, Id3 =
180mA): Pout vs. freq
XP1013-BD_R3C4 (Vd1 = 6.0V, Id1 = 50mA, Vd2 = 6.0V, Id2 = 90mA, Vd3 = 6.0V, Id3 =
180mA): Pout vs. freq
26
26
25
25
24
24
23
, MeasFile=4_0289_R3C4_25082003_0954_-10dBm.pin
, MeasFile=4_0289_R4C2_22082003_1728_-10dBm.pin
22
, MeasFile=4_0289_R3C4_25082003_0957_-8dBm.pin
, MeasFile=4_0289_R4C2_22082003_1730_-8dBm.pin
21
21
, MeasFile=4_0289_R4C2_22082003_1732_-6dBm.pin
20
, MeasFile=4_0289_R4C2_22082003_1733_-4dBm.pin
, MeasFile=4_0289_R4C2_22082003_1735_-2dBm.pin
19
, MeasFile=4_0289_R4C2_22082003_1736_0dBm.pin
18
, MeasFile=4_0289_R4C2_22082003_1738_2dBm.pin
, MeasFile=4_0289_R4C2_22082003_1739_4dBm.pin
17
, MeasFile=4_0289_R3C4_25082003_1000_-6dBm.pin
, MeasFile=4_0289_R3C4_25082003_1001_-4dBm.pin
20
Pout (dBm)
Pout (dBm)
, MeasFile=4_0289_R3C4_25082003_0952_-12dBm.pin
23
, MeasFile=4_0289_R4C2_22082003_1726_-12dBm.pin
22
, MeasFile=4_0289_R4C2_22082003_1740_6dBm.pin
, MeasFile=4_0289_R3C4_25082003_1003_-2dBm.pin
19
, MeasFile=4_0289_R3C4_25082003_1005_0dBm.pin
18
, MeasFile=4_0289_R3C4_25082003_1030_2dBm.pin
17
, MeasFile=4_0289_R3C4_25082003_1032_4dBm.pin
, MeasFile=4_0289_R3C4_25082003_1034_6dBm.pin
16
16
15
15
14
14
13
13
12
12
11
11
10
10
16
17
18
19
20
21
22
23
24
16
25
17
18
19
20
21
22
23
24
25
freq (GHz)
freq (GHz)
XP1013-BD: Pout vs. freq, Pin = 0dBm
XP1013-BD: Pout vs. freq
Pin = 0dBm
28
28
26
26
24
24
22
20
Pout (dBm)
Pout (dBm)
22
18
20
18
16
16
14
14
12
12
10
10
17
18
19
20
21
22
freq (GHz)
23
24
25
26
27
17
18
19
20
21
22
23
24
25
26
27
freq (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-26.0 GHz GaAs MMIC
Power Amplifier
P1013-BD
August 2007 - Rev 08-Aug-07
Mechanical Drawing
1.207
(0.048)
1.539
(0.061)
2.405
(0.095)
2
3
4
1.145
(0.045)
0.549
(0.022)
1
XP1013-BD
8
7
6
0.431
(0.017)
0.808
(0.032)
1.478
(0.058)
0.490
(0.019)
5
0.0
0.0
2.550
(0.100)
(Note: Engineering designator is 20MPA0289)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.807 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vd3)
Bond Pad #5 (RF Out)
Bond Pad #6 (Vg3)
Bond Pad #7 (Vg2)
Bond Pad #8 (Vg1)
Bias Arrangement
Vd1,2,3
Bypass Capacitors - See App Note [2]
Vd1,2,3
2
RF In
4
3
1
XP1013-BD
5
RF Out
RF In
8
7
XP1013-BD
RF Out
6
Vg1,2,3
Vg1,2,3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-26.0 GHz GaAs MMIC
Power Amplifier
P1013-BD
August 2007 - Rev 08-Aug-07
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=6.0V with Id1=47mA,
Id2=90mA and Id3=180mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate
rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the
common gate voltage for a total drain current Id(total)=320 mA. It is also recommended to use active biasing to keep the currents
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available
and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low
value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain
current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes
to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before
applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~1000-2200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1, 2, 3 and Vg1, 2, 3) needs to have DC bypass
capacitance (~1000-2200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
Channel
Temperature
Rth
MTTF Hours
FITs
55 deg Celsius
176.3 deg Celsius
63.8° C/W
9.79E+06
1.02E+02
75 deg Celsius
204.0 deg Celsius
67.8° C/W
9.32E+05
1.07E+03
95 deg Celsius
231.1 deg Celsius
71.6° C/W
1.21E+05
8.30E+03
Bias Conditions: Vd1=Vd2=Vd3=6.0V, Id1=47 mA, Id2=90 mA, Id3=180 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-26.0 GHz GaAs MMIC
Power Amplifier
P1013-BD
August 2007 - Rev 08-Aug-07
Device Schematic
Vd2
Vd1
R=4.4
R=8.0
R=2.0
R=16.0
RFout
RFin
R=20.0
R=20.0
R=20.0
R=30.0
R=30.0
R=30.0
Vg3
Vg1
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
17.0-26.0 GHz GaAs MMIC
Power Amplifier
P1013-BD
August 2007 - Rev 08-Aug-07
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance
with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XP1013-BD-000V
XP1013-BD-EV1
Description
Where “V” is RoHS compliant die packed in vacuum release gel paks
XP1013 die evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.