17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing General Description Mimix Broadband’s 17.0-25.0 GHz GaAs packaged receiver has a noise figure of 2.5 dB and 20.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +4.5 VDC 180, 165 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Input Return Loss RF (S11) Small Signal Conversion Gain RF/IF (S21)2 LO Input Drive (PLO) Image Rejection2 Noise Figure (NF)2 Isolation LO/RF @ LOx1/LOx2 Input Third Order Intercept (IIP3)1,2 Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical) Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical) Units GHz GHz GHz GHz dB dB dBm dBc dB dB dBm VDC VDC VDC mA mA Min. 17.0 17.0 8.0 DC 40.0 -1.2 - Typ. 15.0 8.0 +2.0 20.0 2.5 -7.0 +4.0 +4.0 -0.3 130 116 Max. 25.0 25.0 14.0 3.0 +4.5 +4.5 +0.1 155 140 (1) Measured using constant current. (2) Measured using LO Input drive level of +2.0 dBm. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 Receiver Measurements XR1006-QD, LSB Conversion Gain (dB) over Temperature XR1006-QD, USB Conversion Gain (dB) over Temperature 20 20 18 '@ + 85°C '@ 25°C '@-40°C 16 Conversion Gain (dB) Conversion Gain (dB) 18 '@ 85°C '@ 25°C '@ -40°C 16 14 12 10 8 6 14 12 10 8 6 4 4 2 2 0 0 16 17 18 19 20 21 22 RF (GHz) [IF=2GHz] 23 24 25 26 16 17 18 19 RF (GHz) [IF=2GHz] 20 21 XR1006-QD, LSB Image Rejection (dBc) over Temperature XR1006-QD, USB Image Rejection (dBc) over Temperature 0 0 -5 -5 '@ +25°C '@ -40°C '@ +85°C -10 Image Rejection (dBc) Image Rejection (dBc) -10 -15 -20 -25 -30 -35 '@ +25°C '@ -40°C '@+ 85°C -40 -15 -20 -25 -30 -35 -45 -40 -50 16 17 18 19 20 21 22 RF (GHz) [IF=2GHz] 23 24 25 16 26 XR1006-QD, Input Referred IP3 (dBm) at USB and LSB Input Power/Tone = 23 dBm, 50MHz Spacing 5 5 3 3 1 1 -1 -1 -3 -3 -5 -7 18 19 RF (GHz) [IF=2GHz] 20 21 22 -5 -7 -9 -9 -11 -11 USB LSB -13 17 XR1006-QD, USB Input Referred IP3 (dBm) over Temperature Input Power/Tone = 23 dBm, 50MHz Spacing IIP3 (dBm) IIP3 (dBm) 22 25 Deg C -40 Deg C +85 Deg C -13 -15 -15 16 17 18 19 20 21 22 RF (GHz) [IF=2GHz] 23 24 25 26 16 17 18 19 20 21 22 RF (GHz) [IF=2GHz] Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com 23 24 25 Page 2 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 26 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 Receiver Measurements (cont.) XR1006-QD, USB Noise Figure (dB) over Temperature XR1006-QD, USB Input P1dB (dBm) over Temperature 0 10 9 '@+ 25°C '@+ 85°C '@ -40°C 8 +25 Deg C -40 Deg C +85 Deg C -5 IP1dB (dBm) NF(dB) 7 -10 6 5 -15 4 3 -20 2 1 0 -25 16 17 18 19 20 21 22 RF (GHz) [IF=2GHz] 23 24 25 26 16 17 18 19 20 21 22 RF (GHz) [IF=2GHz] 23 24 25 XR1006-QD, RF Input Return Loss (dB) 0 -5 S11 (dB) -10 -15 -20 -25 -30 16 18 20 22 24 26 RF (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 26 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 Physical Dimensions (Note: Engineering designator is 22REC0281) 44 43 IF1_OUT VD2 VD1 Functional Schematic 42 41 40 39 38 37 36 35 1 33 XR1006-QD 2 GND Pin Designations 34 32 3 31 4 30 5 Image Reject Mixer RF Input Amp LO Buffer 29 GND 28 LO IN GND RF IN 6 GND 7 27 8 26 9 25 10 24 11 23 15 16 17 18 19 20 21 Pin Name Pin Function RF in VG1 VG2 IF2 LO in IF1 VD2 VD1 RF input LNA Gate Bias LO Buffer Gate Bias IF2 output LO input IF1 output LO Buffer Drain Bias LNA Drain Bias Nominal Value Unit -0.3 -0.1 V V 4.0 3.5 V V All other pins N/C 22 IF2_OUT 14 VG2 13 VG1 12 Pin Number 6 13 15 18 28 38 41 43 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 Board Layout VD2 Application Circuit 10 nF 1uF VD1 IF1_OUT 10 nF 1uF RF IN LO IN 50 Ohm Line 50 Ohm Line VG1 VG2 IF2_OUT 1uF 10 nF 1uF 10 nF Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 App Note [1] Biasing - The device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=130mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. MTTF MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate. MTTF vs. Backplate Temperature 1.0E+09 1.0E+08 MTTF (Years) 1.0E+07 1.0E+06 1.0E+05 1.0E+04 1.0E+03 1.0E+02 1.0E+01 1.0E+00 20 30 40 50 60 70 80 90 100 110 Temperature (degrees) Bias Conditions: Vd1=4.0V, Vd2=4.0V, Id1=130 mA, Id2=116 mA Typical Application XR1006-QD BPF RF IN 17.7-19.7 GHz LNA IR Mixer IF Out 2 GHz Coupler AGC Control LO(+2.0dBm) 7.85-8.85 GHz (USB Operation) 9.85-10.85 GHz (LSB Operation) Mimix Broadband MMIC-based Receiver Block Diagram Mimix Broadband's 17.0-25.0 GHz XR1006-QD GaAs Receiver can be used in saturated radio applications and linear modulation schemes up to 16 QAM. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-25.0 GHz GaAs Receiver QFN, 7x7 mm R1006-QD February 2007 - Rev 16-Feb-07 App Note [3] USB/LSB Selection - LSB USB IF2 For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. IF1 An alternate method of Selection of USB or LSB: -90 USB LSB In Phase Combiner In Phase Combiner -90o o IF2 IF1 IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 8 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. February 2007 - Rev 16-Feb-07 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.