2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2007 - Rev 27-Jul-07 Features Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout General Description Mimix Broadband's 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler delivers + 16 dBm of output power. The circuit combines an active doubler with an output buffer amplifier that delivers constant power over a range of input powers. The circuit has excellent rejection of the fundamental and harmonic products and requires a single positive bias supply. This MMIC uses Mimix Broadband's 2 um GaAs HBT device model technology to ensure high reliability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vcc) Supply Current (Id) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Junction Temperature (Tj) +6.0 VDC 200 mA +10.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Junction temperature affects a device's MTTF. It is recommended to keep junction temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Input Frequency Range (fin) Output Frequency Range (fout) Input Return Loss (S11) Output Return Loss (S22) Saturated Output Power (Psat) RF Input Power (RF Pin) Fundamental Leakage (fin) Third Harmonic Leakage (3xfin) Fourth Harmonic Leakage (4xfin) Bias Voltage (Vcc) Supply Current Units GHz GHz dB dB dBm dBm dBc dBc dBc VDC mA Min. 2.5 5.0 -3.0 - Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Typ. -15 TBD +16 -35 -30 -20 +5.0 120 Max. 6.0 12.0 +3.0 +5.5 140 Page 1 of 5 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2007 - Rev 27-Jul-07 Doubler Measurements Ic c (mA ) vs . Fin (GH z): Vcc = 5.0V, Pin = - 3, 0 an d + 3 d B m Pout (d Bm ) vs . Fo ut (G Hz): Pin = - 3, 0 a nd + 3 dB m 160 20 19 140 18 17 120 16 100 14 Icc (mA) Pout (dBm) 15 13 12 11 80 Vcc = 5. 0V 60 10 Pi n = - 3 dB m 9 40 8 Pin = 0 dBm Pi n = - 3 d B m 7 Pin = 0 dBm 6 P in = + 3 dB m 20 Pin = + 3 dBm 0 5 4 5 6 7 8 9 10 11 12 13 2 14 2.5 3 3.5 4 Fun damental Leakage (dBc) vs . Fi n ( GHz) 5 5.5 6 6.5 7 Pout_3xF in (d Bc) v s . 3xFi n (GHz) 0 0 -5 -10 Pin = +3 dBm (bl ue) Pin = 0 dBm (gr een) Pin = -3dB m ( red) -10 -20 Pout _3xFin (d Bc ) Fun dame ntal Leakage (dBc) 4.5 Fin (GHz) Fout (GHz) -15 -20 -25 -30 -40 -50 -30 Pin = +3dBm (bl ue) Pin = 0 dBm (gr een) Pin = -3dBm (re d) -60 -35 -40 -70 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 6 7 7 8 9 10 11 Fi n ( GHz ) 12 13 14 15 16 15 Frequency (GHz) 20 17 18 19 20 21 3xFin (GHz) Pout_4xF in (d Bc) v s . 4xFi n (GHz) S11 0 0 -5 -5 -10 -15 S1 1 ( dB ) Pout_4xF in (d B c ) -10 -20 -25 -15 -20 -30 -25 Pin = +3dBm (bl ue) Pin = 0 dBm (gr een) Pin = -3dB m ( red) -35 -30 -40 8 10 12 14 16 18 4xFin (GHz) 20 22 24 26 28 0 5 10 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com 25 30 Page 2 of 5 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2007 - Rev 27-Jul-07 Mechanical Drawing 0.632 (0.025) 0.800 (0.031) 2 0.371 (0.015) 1 3 0.300 (0.012) 0.0 0.0 2.000 (0.079) (Note: Engineering designator is 5DBL0644) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.200 x 0.100 (0.008 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.566 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vcc) Bond Pad #3 (RF Out) Bias Arrangement Vcc 2 RF In 1 3 RF Out Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 5 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2007 - Rev 27-Jul-07 App Note [1] Biasing - As shown in the bonding diagram, this is a single supply device which is operated by biasing Vcc with Vcc=5.0 V and Icc~120 mA. App Note [2] Bias Arrangement - The DC pad (Vcc) needs to have DC bypass capacitance. (~100 - 200 pF) as close to the device as possible. App Note [3] Bonding - It is recommended that two bandwires be used for each RF In and RF Out connection for maximum band- width and output power. MTTF Tables These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature MTTF Hours FITs 55 deg Celsius 2.67E+06 375 75 deg Celsius 3.01E+05 3321 95 deg Celsius 4.46E+04 22440 Bias Conditions: Vcc=5.0V, Icc=125 mA Functional Schematic Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 5 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002-BD July 2007 - Rev 27-Jul-07 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided). The work station temperature should be 310º C +/- 10º C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information Part Number for Ordering XX1002-BD-000V XX1002-BD-EV1 Description “V” - vacuum release gel paks XX1002 die evaluation module Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 5 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.