M-Pulse Microwave Low OperatingVoltage, High fT SiGe Microwave Transistors Features • Designed for Battery Operation • fT to 14 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic Packaging and Die Available • Can be Screened to JANTX, JANTXV Equivalent Levels MPSIG001 Case Styles 535 Description The MPSIG001 family of low voltage, high gain bandwidth silicon SiGe transistors provides low noise figure and high gain at low bias voltages. These transistors are especially attractive for low operating voltage low noise amplifiers or driver amplifiers at frequencies to 5 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 14 GHz. The MPSIG001 family was designed to have low noise figure at operating voltages as low as 2 volts. These transistors also exhibit low phase noise in VCOs operating at 2.5 volts or less. Micro-X Because this transistor family was specifically designed to operate from low bias voltage, it has superior phase noise. The MPSIG001 series transistors are available in hermetic Micro-X packages and in chip form (MPSIG00100). Other stripline and hermetic packages are available. The chip and hermetic packages can be screened to JANTX, JANTXV equivalent levels . Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 1 Low Operating Voltage, High fT SiGe Transistors MPSIG001 Series Maximum Ratings (TA = 25°C) MPSIG001 Series Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage VCE 3V Emitter-Base Voltage VEB 1.5 V Collector Current IC 75 mA Junction Operating Temperature Tj 200°C Storage Temperature Chip or Ceramic Packages TS -65°C to +200°C 300 mW 150°C Power Dissipation Micro-X Pkg (MPSIG001-535) Electrical Specifications @ 25°C MPSIG001 Series Parameter of Test Condition Units Chip Micro-X 18 typ 18 typ 17 typ 11 typ 16 min 10.0 min .9 typ 1.1 typ .9 typ 1.1 typ 13 typ 12 typ 19 typ 12 typ 18 typ 11 typ 15 typ 14 typ VCE = 2 V IC = 20 mA fT GHz Insertion Power Gain VCE = 2 V IC = 5 mA f = .9 GHz f = 2 GHz |S21E|2 dB VCE = 2 V IC = 5 mA f = .9 GHz f = 2 GHz NF VCE = 2 V IC = 5 mA f = 2 GHz GTU (max) VCE = 2 V IC = 5 mA f = .9 GHz f = 2 GHz MAG VCE = 2 V IC = 20 mA f = .9 GHz P1dB Unilateral Gain Maximum Available Gain Output Power at 1 dB Compression MPSIG001-535 Symbol Gain Bandwidth Product Noise Figure MPSIG00100 dB dB dB dBm Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 2 Low Operating Voltage, High fT SiGe Microwave Transistors MPSIG001 Series Electrical Specifications @ 25°C Parameter Condition Symbol Min Typical Max Units ICBO ⎯ ⎯ 100 µA Collector Cut-off Current VCB = 2 volts IE = 0 µA Collector to Emitter Beakdown Voltage Ic = 10 uA BVCEO 2.5 ⎯ ⎯ V Collector to Base Breakdown Voltage IC = 10 uA BVCBO 7 ⎯ ⎯ V Collector to Emitter Breakdown Voltage IE = 10 uA BVEBO 3 ⎯ ⎯ V Collector to Substrate Breakdown Voltage IR = 10 uA BVSO 30 45 ⎯ V Forward Current Gain VCE = 3 volts IC = 5 mA hFE 20 100 300 ⎯ Base Emitter Voltage VCC = 10 uA VBE 700 ⎯ 800 mV Typical Common Emitter Scattering Parameters in the MIcro-X Package MPSIG001-535, VCE = 2 Volts, IC = 5 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 100 200 .843 .792 -17.6 -34.2 15.1 14.0 165.5 152.9 0.021 0.039 78.2 69.1 0.962 0.892 -15.4 -29.7 300 .730 -49.3 12.7 142.5 0.056 62.7 0.805 -41.7 400 .671 -62.5 11.4 133.8 0.065 57.4 0.716 -51.8 500 .622 -73.4 10.2 127.1 0.072 53.7 0.639 -59.9 1000 .455 -108.9 6.1 108.4 0.094 50.4 0.377 -87.5 1500 .400 -132.9 4.2 97.6 0.108 53.9 0.280 -110.0 2000 .341 -148.7 3.3 92.9 0.123 59.3 0.208 -125.8 2500 .355 -167.8 2.8 89.7 0.142 64.8 0.208 -147.2 3000 .366 -179.4 2.4 91.1 0.160 71.4 0.204 -166.8 MPSIG001-535, VCE = 2 Volts, IC = 10 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 100 200 .708 .629 -27.1 -51.2 24.5 21.8 159.8 143.8 0.021 0.034 73.8 65.2 0.925 0.801 -22.7 -42.1 300 .562 -70.9 18.4 132.1 0.044 59.1 0.681 -56.7 400 .498 -86.2 15.6 123.5 0.052 56.4 0577 -68.3 500 .461 -98.1 13.4 117.3 0.057 55.6 0.498 -76.9 1000 .343 -133.4 7.5 102.3 0.079 60.4 0.280 -108.7 1500 .337 -155.1 5.1 93.8 0.102 65.6 0.229 -134.4 2000 .297 -171.5 3.9 90.4 0.128 70.4 0.168 -171.8 2500 .352 173.6 3.3 88.7 0.157 73.6 0.214 171.9 3000 .373 162.8 2.9 90.9 0.178 78.1 0.235 135.9 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Low Operating Voltage, High fT SiGe Transistors MPSIG001 Series MPSIG001-535 Typical Performance Curves NOMINAL GAIN vs COLLECTOR CURRENT at VCE = 2 Volts, f = .9 GHz (MPSIG001-535) POWER DERATING CURVE 22 300 MPSIG001-535 250 20 GAIN (dB) POWER DIS. (Mw) 350 200 150 100 GU(MAX) 18 S21 16 50 0 0 50 100 150 14 200 2 ANBIENT TEMP. 4 6 8 10 12 14 16 Collector Current NOMINAL GAIN vs COLLECTOR CURRENT at VCE = 2 Volts, f = 2 GHz (MPSIG001-535) 13 GA(MAX) GAIN (dB) 12 GU(MAX) 11 S21 10 9 8 1 6 11 16 Collector Current Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 4