MICROSEMI APTGF25H120T1G

APTGF25H120T1G
Full - Bridge
NPT IGBT Power Module
3
4
Q3
Q1
CR1 CR3
2
5
6
Q2
1
Q4
CR2 CR4
9
7
8
11
10
NTC
12
VCES = 1200V
IC = 25A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Pins 3/4 must be shorted together
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
1200
40
25
100
±20
208
Tj = 125°C
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TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
March , 2009
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTGF25H120T1G – Rev 1
Symbol
VCES
APTGF25H120T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 25A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Typ
VGE = 0V
VCE = 1200V
2.5
3.2
4.0
4
Max
250
500
3.7
Unit
µA
V
6
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 600V
IC =25A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
VGE = 15V
Tj = 125°C
VBus = 600V
IC = 25A
Tj = 125°C
RG = 22Ω
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
1650
250
110
160
10
70
60
50
305
pF
nC
ns
30
60
50
346
ns
40
3.5
mJ
1.5
Reverse diode ratings and characteristics
IRM
Min
IF
DC Forward Current
VF
Diode Forward Voltage
VR=1200V
IF = 30A
IF = 60A
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
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Unit
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 30A
trr
Max
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
100
500
30
2.6
3.2
Tj = 125°C
1.8
Tj = 25°C
300
Tj = 125°C
Tj = 25°C
380
360
Tj = 125°C
1700
µA
A
3.1
March , 2009
VRRM
Test Conditions
V
ns
nC
2–6
APTGF25H120T1G – Rev 1
Symbol Characteristic
APTGF25H120T1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
IGBT
Diode
To heatsink
M4
2500
-40
-40
-40
2.5
Max
0.6
1.2
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT =
Min
R25
Typ
50
3952
Max
Unit
kΩ
K
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
T
T
25
⎝
⎠⎦
⎣
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTGF25H120T1G – Rev 1
March , 2009
SP1 Package outline (dimensions in mm)
APTGF25H120T1G
Typical Performance Curve
Output characteristics (VGE=15V)
250µs Pulse Test
< 0.5% Duty cycle
50
40
TJ=25°C
30
TJ=125°C
20
10
12
TJ=25°C
8
TJ=125°C
4
1
2
3
4
5
6
7
VCE, Collector to Emitter Voltage (V)
0
8
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
80
250µs Pulse Test
< 0.5% Duty cycle
60
40
TJ=125°C
20
TJ=25°C
0
2.5
5
7.5
10
12.5
VGE, Gate to Emitter Voltage (V)
TJ = 125°C
250µs Pulse Test
< 0.5% Duty cycle
8
7
Ic=50A
6
5
Ic=25A
4
3
2
Ic=12.5A
1
0
9
10
11
12
13
14
IC = 25A
TJ = 25°C
16
2
2.5
3
3.5
VCE=240V
VCE=600V
14
12
10
VCE=960V
8
6
4
2
0
0
15
16
6
30
60
90
120
150
180
On state Voltage vs Junction Temperature
Ic=50A
5
Ic=25A
4
3
Ic=12.5A
2
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
1
0
25
VGE, Gate to Emitter Voltage (V)
40
Ic, DC Collector Current (A)
1.10
1.05
1.00
0.95
0.90
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
30
March , 2009
Breakdown Voltage vs Junction Temp.
Collector to Emitter Breakdown Voltage
(Normalized)
1.5
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
9
1
Gate Charge
18
15
VCE, Collector to Emitter Voltage (V)
0
0.5
VCE, Collector to Emitter Voltage (V)
20
10
0
25
50
75
100
125
TJ, Junction Temperature (°C)
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25
50
75
100
125
TC, Case Temperature (°C)
150
4–6
APTGF25H120T1G – Rev 1
0
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
0
0
VCE, Collector to Emitter Voltage (V)
Output Characteristics (VGE=10V)
16
Ic, Collector Current (A)
Ic, Collector Current (A)
60
APTGF25H120T1G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VCE = 600V
RG = 22Ω
70
65
VGE = 15V
60
55
50
5
15
25
35
45
400
VGE=15V,
TJ=125°C
350
300
250
200
55
5
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 22Ω
120
45
tf, Fall Time (ns)
tr, Rise Time (ns)
35
45
55
Current Fall Time vs Collector Current
80
VGE=15V
40
TJ = 125°C
40
35
TJ = 25°C
30
25
5
15
25
35
45
VCE = 600V, VGE = 15V, RG = 22Ω
20
55
5
ICE, Collector to Emitter Current (A)
VCE = 600V
RG = 22Ω
8
TJ=125°C,
VGE=15V
6
TJ=25°C,
VGE=15V
4
2
0
55
4
VCE = 600V
VGE = 15V
RG = 22Ω
3
TJ = 125°C
2
TJ = 25°C
1
0
5
15
25
35
45
ICE, Collector to Emitter Current (A)
55
5
Switching Energy Losses vs Gate Resistance
15
25
35
45
ICE, Collector to Emitter Current (A)
55
Reverse Bias Safe Operating Area
60
IC, Collector Current (A)
Eon, 25A
3
Eoff, 25A
2
1
0
50
40
March , 2009
VCE = 600V
VGE = 15V
TJ= 125°C
4
15
25
35
45
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
10
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
25
50
0
Switching Energy Losses (mJ)
15
ICE, Collector to Emitter Current (A)
160
5
VGE=15V,
TJ=25°C
VCE = 600V
RG = 22Ω
30
20
10
0
0
10
20
30
40
50
60
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
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5–6
APTGF25H120T1G – Rev 1
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
75
APTGF25H120T1G
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
Thermal Impedance (°C/W)
0.5
100
80
ZVS
VCE = 600V
D = 50%
RG = 22Ω
TJ = 125°C
TC= 75°C
60
40
Hard
switching
ZCS
20
0
0
10
20
30
IC, Collector Current (A)
40
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
50
Operating Frequency vs Collector Current
120
0.9
0.7
0.4
0.3
0.2
0.1
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTGF25H120T1G – Rev 1
March , 2009
Rectangular Pulse Duration (Seconds)