NANOAMP N02L1618C1AB

NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02L1618C1A
Advance Information
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Overview
Features
The N02L1618C1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N02L163WN1A, which is processed to
operate at higher voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L1618C1A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 128Kb x
16 SRAMs.
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
1.4mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available
Product Family
Part Number
Package Type
N02L1618C1AB
48 - BGA
N02L1618C1AB2 Green 48-BGA
N02L1618C1AT2 Green 44-TSOP2
N02L1618C1AT
Operating
Temperature
Power
Supply
(Vcc)
-40oC to +85oC 1.65V - 2.2V
Speed
70/85ns @
1.65V
Standby
Operating
Current (ISB), Current (Icc),
Max
Max
10 µA
3 mA @ 1MHz
44 - TSOP2
(DOC# 14-02-012 REV B ECN# 01-1274)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Pin Configurations
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
N02L1618C1A
TSOP
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
NC
B
I/O8
UB
A3
A4
CE
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
VSS
I/O11
NC
A7
I/O3
VCC
E
VCC
I/O12
NC
A16
I/O4
VSS
F
I/O14 I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE
I/O7
H
NC
A8
A9
A10
A11
NC
48 Pin BGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
Pin Function
A0-A16
Address Inputs
WE
CE
OE
LB
UB
I/O0-I/O15
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
NC
VCC
Not Connected
VSS
Ground
Data Inputs/Outputs
Power
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Page
Address
Word Mux
Address
Inputs
A4 - A16
Word
Address
Decode
Logic
8K Page
x 16 word
x 16 bit
RAM Array
Decode
Logic
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
CE
WE
OE
UB
LB
Control
Logic
Functional Description
CE
WE
OE
UB
LB
I/O0 - I/O151
MODE
POWER
H
X
X
X
X
High Z
Standby2
Standby
L
X
X
H
H
High Z
Standby2
Standby
L
X3
L1
L1
Data In
Write3
Active
L
L1
L1
Data Out
Read
Active
H
L1
L1
High Z
Active
Active
L
L
L
H
H
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
CIN
CI/O
I/O Capacitance
Max
Unit
VIN = 0V, f = 1 MHz, TA = 25oC
8
pF
25oC
8
pF
VIN = 0V, f = 1 MHz, TA =
Min
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 3.0
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
o
Operating Temperature
TA
-40 to +85
o
Soldering Temperature and Time
TSOLDER
240oC, 10sec(Lead only)
o
C
C
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Min.
Typ1
Max
Unit
1.65
1.8
2.2
V
1.2
2.2
V
VIH
0.7Vcc
VCC+0.3
V
Input Low Voltage
VIL
–0.3
0.3Vcc
V
Output High Voltage
VOH
IOH = 0.2mA
Output Low Voltage
VOL
IOL = -0.2mA
0.3
V
Input Leakage Current
ILI
VIN = 0 to VCC
0.5
µA
Output Leakage Current
ILO
OE = VIH or Chip Disabled
0.5
µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
1.4
3.0
mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
ICC2
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
8.0
17.0
mA
Page Mode Operating Supply Current
@ 70ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
ICC3
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.0
4.0
mA
Read/Write Quiescent Operating Supply Current3
ICC4
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
0.1
mA
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 2.2 V
10.0
µA
5.0
µA
Item
Symbol
Supply Voltage
VCC
Data Retention Voltage
VDR
Input High Voltage
Maximum Standby
Current3
Maximum Data Retention Current3
IDR
Test Conditions
Chip Disabled2
VCC = 1.2V, VIN = VCC or 0
Chip Disabled, tA= 85oC
VCC–0.2
V
0.5
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be
within 0.2 volts of either VCC or VSS
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A16 )
Word Address (A0 - A3)
Open page
Word 1
Word 2
...
Word 16
CE
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Power Supply Voltage
1.65 - 2.2V
Operating Temperature
-40 to +85 oC
Timing
85ns
70ns
Item
Symbol
Read Cycle Time
tRC
Address Access Time
tAA
85
70
ns
Chip Enable to Valid Output
tCO
85
70
ns
Output Enable to Valid Output
tOE
30
25
ns
Byte Select to Valid Output
tLB, tUB
85
70
ns
Chip Enable to Low-Z output
tLZ
10
10
ns
Output Enable to Low-Z Output
tOLZ
5
5
ns
Byte Select to Low-Z Output
tLBZ, tUBZ
10
10
ns
Chip Disable to High-Z Output
tHZ
30
25
ns
Output Disable to High-Z Output
tOHZ
30
25
ns
Byte Select Disable to High-Z Output
tLBHZ, tUBHZ
25
ns
Output Hold from Address Change
tOH
5
5
ns
Write Cycle Time
tWC
85
70
ns
Chip Enable to End of Write
tCW
50
40
ns
Address Valid to End of Write
tAW
50
40
ns
Byte Select to End of Write
tLBW, tUBW
50
40
ns
Write Pulse Width
tWP
50
40
ns
Address Setup Time
tAS
0
0
ns
Write Recovery Time
tWR
0
0
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
40
40
ns
Data Hold from Write Time
tDH
0
0
ns
End Write to Low-Z Output
tOW
10
10
ns
Min.
Max.
85
Min.
Max.
Units
70
30
25
ns
20
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
ns
6
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE = OE = VIL, WE = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE= VIH)
tRC
Address
tAA
tHZ
tCO
CE
tLZ
tOHZ
tOE
OE
tOLZ
tLB, tUB
LB, UB
tLBLZ, tUBLZ
Data Out
High-Z
tLBHZ, tUBHZ
Data Valid
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tWR
tAW
tCW
CE
tLBW, tUBW
LB, UB
tWP
tAS
WE
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
DETAIL B
Data Out
Timing Waveform of Write Cycle (CE Control)
tWC
Address
tAW
tWR
tCW
CE
tAS
tLBW, tUBW
LB, UB
tWP
WE
tDW
Data Valid
Data In
tLZ
Data Out
tDH
tWHZ
High-Z
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
44-Lead TSOP II Package (T44)
18.41±0.13
11.76±0.20
10.16±0.13
0.80mm REF
0.45
0.30
DETAIL B
SEE DETAIL B
1.10±0.15
0o-8o
0.20
0.00
0.80mm REF
Note:
1. All dimensions in inches (Millimeters)
2. Package dimensions exclude molding flash
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Ball Grid Array Package
0.28±0.05
1.24±0.10
D
A1 BALL PAD
CORNER (3)
1. 0.35±0.05 DIA.
E
2. SEATING PLANE - Z
0.15 Z
0.05
TOP VIEW
Z
SIDE VIEW
1. DIMENSION IS MEASURED AT THE
A1 BALL PAD
MAXIMUM SOLDER BALL DIAMETER.
CORNER
PARALLEL TO PRIMARY Z.
SD
e
SE
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
BOTTOM VIEW
Dimensions (mm)
e = 0.75
D
6±0.10
SD
SE
J
K
BALL
MATRIX
TYPE
0.375
0.375
1.125
1.375
FULL
E
8±0.10
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
10
N02L1618C1A
Advance Information
NanoAmp Solutions, Inc.
Ordering Information
N02L1618C1AX-XX X
Temperature
Performance
Package Type
I = Industrial, -40°C to 85°C
70 = 70ns
T = 44-pin TSOP II
B = 48-ball BGA
T2 = 44-pin TSOPII Green Package (RoHS Compliant)
B2 = 48-ball BGA Green Package (RoHS Compliant)
Revision History
Revision #
Date
Change Description
A
Apr. 2003
Initial Release
B
Nov. 2005
Added TSOP II Green Pkg. , Green Pkg. Part # and RoHS Compliant
© 2003 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
11