N08L083WC2C
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
Advance Information
8Mb Ultra-Low Power Asynchronous CMOS SRAM
1024K × 8 bit
Overview
Features
The N08L083WC2C is an integrated memory
device containing a 8 Mbit Static Random Access
Memory organized as 1,048,576 words by 8 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. The
N08L083WC2C is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 512Kb x
16 SRAMs
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available
Product Family
Part Number
Operating
Temperature
Package Type
N08L083WC2CT1 44 TSOP II Pb Free
Pin Configuration
-40oC to +85oC
Power
Speed
Supply (Vcc)
2.2V - 3.6V
55ns
PIN
ONE
N08L083WC2C
TSOP - II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
2 µA
1.5 mA @ 1MHz
Pin Descriptions
Pin Name
A4
A3
A2
A1
A0
CE
DNU
DNU
I/O0
I/O1
VCC
VSS
I/O2
I/O3
DNU
DNU
WE
A19
A18
A17
A16
A15
Standby
Current Operating Current
(ISB),
(Icc), Typical
Typical
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
CE2
A8
DNU
DNU
I/O7
I/O6
VSS
VCC
I/O5
I/O4
DNU
DNU
A9
A10
A11
A12
A13
A14
Pin Function
A0-A19
Address Inputs
WE
CE1, CE2
OE
I/O0-I/O7
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
VCC
Power
VSS
Ground
NC
Not Connected
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
Functional Block Diagram
Word
Address
Decode
Logic
Address
Inputs
A4 - A19
Page
Address
Decode
Logic
CE1
CE2
WE
OE
1024K
x 8 bit
RAM Array
Word Mux
Address
Inputs
A0 - A3
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Control
Logic
Functional Description
CE1
CE2
WE
OE
I/O0 - I/O7
MODE
POWER
H
X
X
X
High Z
Standby
Standby
X
L
X
X
High Z
Standby
Standby
1
Active
L
H
L
X
Data In
Write3
L
H
H
L
Data Out
Read
Active
L
H
H
H
High Z
Active
Active
1. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
CIN
I/O Capacitance
CI/O
Min
Max
Unit
VIN = 0V, f = 1 MHz, TA = 25oC
10
pF
VIN = 0V, f = 1 MHz, TA = 25oC
10
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
Absolute Maximum Ratings
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–65 to 150
oC
Operating Temperature
TA
-40 to +85
oC
Soldering Temperature and Time
TSOLDER
260oC, 10sec
o
C
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Supply Voltage
VCC
Data Retention Voltage
VDR
Test Conditions
Min.
Typ1
Max
Unit
2.2
3.0
3.6
V
Chip Disabled
1.5
Vcc = 2.2V to 2.7V
1.8
VCC+0.3
V
Vcc = 2.7V to 3.6V
2.2
VCC+0.3
Vcc = 2.2V to 2.7V
-0.3
0.6
Vcc = 2.7V to 3.6V
-0.3
0.8
IOH = -0.1mA, Vcc = 2.2V
2.0
IOH = -1.0mA, Vcc = 2.7V
2.4
Input High Voltage
VIH
Input Low Voltage
VIL
Output High Voltage
VOH
Output Low Voltage
VOL
Input Leakage Current
ILI
VIN = 0 to VCC
-1
1
µA
Output Leakage Current
ILO
VOUT = 0 to VCC
Output Disabled
-1
1
µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
@ fmax
ICC2
VCC=3.6 V, VIN=VIH or VIL Chip
Enabled, IOUT = 0
Maximum Standby Current
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 3.6 V
Maximum Data Retention Current
IDR
0.4
IOL = 2.1mA, Vcc = 2.7V
0.4
-L
-L
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V -L
V
V
IOL = 0.1mA, Vcc = 2.2V
-L
V
1.5
3.0
1.5
3.0
12.0
20.0
12.0
15.0
2.0
20
2.0
8
10
4
V
mA
mA
µA
µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
1V/ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF/50pF
Operating Temperature
-40 to +85 oC
Timing
55
Item
Symbol
Read Cycle Time
tRC
Address Access Time (Random Access)
tAA
55
ns
Chip Enable to Valid Output
tCO
55
ns
Output Enable to Valid Output
tOE
25
ns
Chip Enable to Low-Z output
tLZ
10
ns
Output Enable to Low-Z Output
tOLZ
5
ns
Chip Disable to High-Z Output
tHZ
20
ns
Output Disable to High-Z Output
tOHZ
20
ns
Output Hold from Address Change
tOH
10
ns
Write Cycle Time
tWC
55
ns
Chip Enable to End of Write
tCW
40
ns
Address Valid to End of Write
tAW
40
ns
Write Pulse Width
tWP
40
ns
Address Setup Time
tAS
0
ns
Write Recovery Time
tWR
0
ns
Min
Max
55
Units
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
25
ns
Data Hold from Write Time
tDH
0
ns
End Write to Low-Z Output
tOW
10
ns
20
ns
Note:
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200µs wait time after Vcc stablization.
2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100µs.
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA,
tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA,
tHZ
CE1
tCO
CE2
tLZ
tOHZ
tOE
OE
tOLZ
Data Out
High-Z
Data Valid
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tWR
tAW
CE1
tCW
CE2
tAS
tWP
WE
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tAW
CE1
(for CE2 Control, use
inverted signal)
tWR
tCW
tAS
tWP
WE
tDW
Data Valid
Data In
tLZ
Data Out
tDH
tWHZ
High-Z
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
Data Retention Characteristics
Parameter
Description
Condition
Min
Typ
Max
VDR
Vcc for Data Retention
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery Time
tRC
ns
1.5
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V
V
10
-L
Unit
4
µA
Data Retention Waveform
Data Retention Mode
Vcc
Vcc(min)
VDR ≥ 1.5V
tCDR
Vcc(min)
tR
CE1 or
LB/UB
or
CE2
Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 µs
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
44 TSOP II Package (Z44)
18.571
18.313
11.938
11.735
10.262
10.058
0.80 BSC
0.40
0.30
DETAIL B
SEE DETAIL B
1.194
0.991
0.210
0.120
0o-5o
0.150
0.050
0.597
0.406
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
N08L083WC2C
Advance Information
NanoAmp Solutions, Inc.
Ordering Information
N08L083WC2CX-XX X L
L = Ultra Low Power Sort
Temperature
I = Industrial, -40°C to 85°C
55 = 55ns
Performance
T1 = 44 TSOP II Pb-Free
Package Type
Revision History
Revision
Date
Change Description
A
Jan 14. 2005
Initial Release
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9