DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such Part No. Package as switching regulators, DC/DC converters, and high-frequency power 2SC2335 TO-220AB amplifiers. FEATURES (TO-220AB) • Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A • Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A • Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 7.0 A Collector current (pulse) IC(pulse) 15 A Base current (DC) Symbol Conditions PW ≤ 300 µs, duty cycle ≤ 10% IB(DC) Total power dissipation PT Junction temperature Tj Storage temperature Tstg TC = 25°C TA = 25°C 3.5 A 40 W 1.5 W 150 −55 to +150 °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14861EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC2335 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Symbol Collector to emitter voltage VCEO(SUS) Collector to emitter voltage VCEX(SUS)1 Collector to emitter voltage VCEX(SUS)2 Conditions MIN. IC = 3.0 A, IB1 = 0.6 A, L = 1 mH IC = 3.0 A, IB1 = −IB2 = 0.6 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped IC = 6.0 A, IB1 = 2.0 A, −IB2 = 0.6 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped MAX. Unit V 450 V 400 V 10 µA 1.0 10 mA µA 1.0 mA Collector cutoff current ICBO Collector cutoff current ICER VCB = 400 V, IE = 0 A VCE = 400 V, RBE = 51 Ω, TA = 125°C Collector cutoff current ICEX1 VCE = 400 V, VBE(OFF) = −1.5 V Collector cutoff current ICEX2 VCE = 400 V, VBE(OFF) = −1.5 V, TA = 125°C Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 A 10 µA DC current gain hFE1 VCE = 5.0 V, IC = 0.1 ANote 20 80 DC current gain hFE2 VCE = 5.0 V, IC = 1.0 ANote 20 80 Note 10 DC current gain hFE3 VCE = 5.0 V, IC = 3.0 A Collector saturation voltage VCE(sat) IC = 3.0 A, IB = 0.6 ANote 1.0 V Base saturation voltage VBE(sat) IC = 3.0 A, IB = 0.6 ANote IC = 3.0 A, RL = 50 Ω, IB1 = −IB2 = 0.6 A, VCC ≅ 150 V Refer to the test circuit. 1.2 1.0 V µs 2.5 µs 1.0 µs Turn-on time ton Storage time tstg Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 20 to 40 30 to 60 40 to 80 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. 400 Data Sheet D14861EJ2V0DS 2SC2335 PPDOXPLQXPERDUG QRLQVXODWLQJERDUG JUHDVHFRDWLQJQDWXUDO DLUFRROLQJ :LWKLQILQLWHKHDWVLQN &ROOHFWRU&XUUHQW,&$ 7RWDO3RZHU'LVVLSDWLRQ37: TYPICAL CHARACTERISTICS (TA = 25°°C) 6LQJOHSXOVH 3XOVH:LGWK3:PV &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ &DVH7HPSHUDWXUH7&°& &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 7UDQVLHQW7KHUPDO5HVLVWDQFHUWKMF°&: 'HUDWLQJG7 $PELHQW7HPSHUDWXUH7$°& &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 Data Sheet D14861EJ2V0DS 3 7XUQ2Q7LPHWRQµV 6WRUDJH7LPHWVWJµV )DOO7LPHWIµV 3XOVHWHVW 4 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 '&&XUUHQW*DLQK)( 2SC2335 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ Data Sheet D14861EJ2V0DS 3XOVHWHVW &ROOHFWRU&XUUHQW,&$ 2SC2335 PACKAGE DRAWING (UNIT: mm) %DVH &ROOHFWRU (PLWWHU )LQFROOHFWRU Data Sheet D14861EJ2V0DS 5 2SC2335 • The information in this document is current as of July, 2001. 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