DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5761 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5761-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 8.0 V Collector to Emitter Voltage VCEO 2.3 V Emitter to Base Voltage VEBO 1.2 V IC 35 mA 80 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy substrate 2 THERMAL RESISTANCE Parameter Junction to Case Resistance Symbol Value Unit Rth (j-c) 150 °C/W Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10212EJ02V0DS (2nd edition) Date Published May 2003 CP(K) Printed in Japan The mark ! shows major revised points. NEC Compound Semiconductor Devices 2001, 2003 2SC5761 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 200 nA Emitter Cut-off Current IEBO VBE = 0.5 V, IC = 0 mA − − 200 nA VCE = 2 V, IC = 5 mA 200 − 400 − S21e VCE = 2 V, IC = 20 mA, f = 2 GHz 16.0 18.0 − dB NF VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt − 0.9 1.1 dB VCB = 2 V, IE = 0 mA, f = 1 MHz − 0.17 0.22 pF VCE = 2 V, IC = 20 mA, f = 2 GHz 18.0 20.0 − dB PO (1 dB) VCE = 2 V, IC = 20 mA, f = 2 GHz − 12.0 − dBm OIP3 VCE = 2 V, IC = 20 mA, f = 2 GHz − 22.0 − dBm DC Current Gain hFE Note 1 RF Characteristics 2 Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point Cre Note 2 MSG Note 3 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION 2 Rank FB Marking T16 hFE Value 200 to 400 Data Sheet PU10212EJ02V0DS 2SC5761 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation Ptot (mW) 300 250 200 150 100 80 50 0 100 25 50 75 100 125 f = 1 MHz 0.3 0.2 0.1 2 4 6 8 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 VCE = 2 V 1 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 35 190 µ A 30 160 µ A 25 130 µ A 20 100 µ A 15 70 µ A 10 40 µ A 5 IB = 10 µ A 0 1 2 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V VCE = 2 V DC Current Gain hFE DC Current Gain hFE 3 Base to Emitter Voltage VBE (V) 1 000 100 10 0.1 10 Ambient Temperature TA (˚C) 10 0.0001 0.0 0.4 0 150 Collector Current IC (mA) Collector Current IC (mA) Mounted on Glass Epoxy Board (1.08 cm2 × 1.0 mm (t) ) Reverse Transfer Capacitance Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1 10 100 100 10 0.1 Collector Current IC (mA) 1 10 100 Collector Current IC (mA) Data Sheet PU10212EJ02V0DS 3 2SC5761 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 1 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 35 40 VCE = 1 V f = 2 GHz 10 20 15 10 5 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 0.5 V IC = 20 mA 25 MSG MAG 20 15 |S21e|2 10 5 1 10 35 VCE = 2 V IC = 20 mA 30 MSG 25 MAG 20 |S21e|2 15 10 5 1 35 VCE = 1 V IC = 20 mA 30 MSG 25 MAG 20 15 |S21e|2 10 5 0 0.1 1 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Frequency f (GHz) 10 Frequency f (GHz) 4 30 Collector Current IC (mA) 30 0 0.1 VCE = 2 V f = 2 GHz Collector Current IC (mA) 35 0 0.1 35 0 1 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 40 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Data Sheet PU10212EJ02V0DS 10 2SC5761 30 25 VCE = 2 V f = 1 GHz INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT MSG |S21e|2 20 15 10 5 0 1 10 30 25 20 15 VCE = 2 V f = 2 GHz MSG |S21e|2 10 100 Collector Current IC (mA) 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 30 25 VCE = 2 V f = 5 GHz 20 15 MAG 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Data Sheet PU10212EJ02V0DS 5 2SC5761 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 25 70 20 60 15 Pout 10 50 5 40 0 30 IC –5 20 10 –10 –15 –20 –15 –10 –5 10 50 5 40 0 30 –5 –15 –20 0 0 70 60 10 50 Pout 5 40 0 30 –5 20 10 –10 IC –15 –20 –15 –10 –5 0 0 Input Power Pin (dBm) 6 10 –15 –10 –5 Input Power Pin (dBm) 80 15 20 IC –10 Collector Current IC (mA) Output Power Pout (dBm) 20 60 Pout OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER VCE = 2 V, f = 3 GHz Icq = 5 mA (RF OFF) 70 15 Input Power Pin (dBm) 25 80 VCE = 2 V, f = 2 GHz Icq = 5 mA (RF OFF) Data Sheet PU10212EJ02V0DS 0 0 Collector Current IC (mA) 80 Output Power Pout (dBm) Output Power Pout (dBm) 20 VCE = 2 V, f = 1 GHz Icq = 5 mA (RF OFF) Collector Current IC (mA) 25 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 70 VCE = 2 V Icq = 5 mA f = 1 GHz off set = 1 MHz 60 50 40 30 20 10 0 –5 0 5 10 15 20 3rd Order Intermodulation Distortion IM3 (dBc) 3rd Order Intermodulation Distortion IM3 (dBc) 2SC5761 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 70 60 50 40 30 20 10 0 –5 Output Power (at 1 tone) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) VCE = 2 V Icq = 5 mA f = 2 GHz off set = 1 MHz 0 5 10 15 20 Output Power (at 1 tone) Pout (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 70 VCE = 2 V Icq = 5 mA f = 3 GHz off set = 1 MHz 60 50 40 30 20 10 0 –5 0 5 10 15 20 Output Power (at 1 tone) Pout (dBm) Data Sheet PU10212EJ02V0DS 7 2SC5761 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 4 20 4 20 3 15 3 15 2 10 2 10 Ga 25 0 1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 VCE = 2 V f = 1.5 GHz Ga 20 3 15 2 10 5 1 Ga 4 1 15 2 10 5 1 NF 0 100 10 0 1 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 20 4 Ga 3 15 2 10 5 1 NF 1 10 0 100 Noise Figure NF (dB) VCE = 2 V f = 2 GHz Associated Gain Ga (dB) VCE = 1 V f = 2 GHz Noise Figure NF (dB) 0 100 10 Collector Current IC (mA) 5 4 Ga 20 3 15 2 10 1 0 NF 1 Collector Current IC (mA) 8 20 3 NF 0 0 100 10 Collector Current IC (mA) 4 0 VCE = 2 V f = 1 GHz Collector Current IC (mA) VCE = 1 V f = 1.5 GHz Associated Gain Ga (dB) Noise Figure NF (dB) 0 100 10 5 Noise Figure NF (dB) NF 10 Collector Current IC (mA) Data Sheet PU10212EJ02V0DS 5 0 100 Associated Gain Ga (dB) 1 Noise Figure NF (dB) 0 5 1 VCE = 1 V f = 1 GHz Associated Gain Ga (dB) NF Associated Gain Ga (dB) 5 1 Associated Gain Ga (dB) Noise Figure NF (dB) Ga 2SC5761 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 Ga 3 15 2 10 1 15 2 10 1 0 100 10 3 0 1 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 20 4 Ga 3 15 10 2 1 5 NF 1 Noise Figure NF (dB) VCE = 2 V f = 3 GHz Associated Gain Ga (dB) Noise Figure NF (dB) VCE = 1 V f = 3 GHz 20 4 Ga 3 10 0 5 NF 1 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 20 4 3 15 Ga 10 2 1 NF 1 10 5 0 100 Noise Figure NF (dB) VCE = 2 V f = 4 GHz Associated Gain Ga (dB) VCE = 1 V f = 4 GHz Noise Figure NF (dB) 15 2 1 0 100 10 5 0 0 100 10 Collector Current IC (mA) 5 0 5 NF Associated Gain Ga (dB) 1 Ga 20 4 3 15 Ga 10 2 1 0 NF 1 Collector Current IC (mA) 10 5 Associated Gain Ga (dB) 0 5 NF 20 4 Associated Gain Ga (dB) 20 4 Noise Figure NF (dB) VCE = 2 V f = 2.5 GHz Associated Gain Ga (dB) Noise Figure NF (dB) VCE = 1 V f = 2.5 GHz 0 100 Collector Current IC (mA) Data Sheet PU10212EJ02V0DS 9 2SC5761 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 20 3 15 Ga 2 NF 1 0 10 1 10 5 0 100 4 20 3 15 Ga 2 10 NF 1 0 1 Collector Current IC (mA) 10 5 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ 10 Data Sheet PU10212EJ02V0DS Associated Gain Ga (dB) 4 Noise Figure NF (dB) VCE = 2 V f = 5 GHz Associated Gain Ga (dB) Noise Figure NF (dB) VCE = 1 V f = 5 GHz 2SC5761 EQUAL NF CIRCLE VCE = 2 V IC = 5 mA f = 1 GHz NFmin = 0.8 dB Γopt Unstable Area 1.0 dB 1.5 2.5 4.0 dB 3.5 dB 2.0 dB dB 3.0 dB dB VCE = 2 V IC = 5 mA f = 2 GHz NFmin = 0.85 dB Γopt 1.0 dB B 1.5 d Unstable Area 2.0 dB B 2.5 d 3.0 dB 4.0 dB 3.5 dB Data Sheet PU10212EJ02V0DS 11 2SC5761 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 0.65 0.11+0.1 –0.05 1. 2. 3. 4. Emitter Collector Emitter Base Data Sheet PU10212EJ02V0DS 1.30 0.65 3 4 1 0.30+0.1 –0.05 0.59 ± 0.05 PIN CONNECTIONS 12 0.30+0.1 –0.05 0.60 0.65 1.25 T16 2.0 ± 0.1 2 1.25 ± 0.1 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05 ± 0.1 2SC5761 • The information in this document is current as of May, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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