ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for consumer and industrial applications. Noise Figure, NF (dB) 2.5 21 2 18 1.5 15 1 12 0.5 9 NF Associated Gain, GA (dB) 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz 6 0 10 1 20 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 GA1 P1dB G1dB IDSS PARAMETERS AND CONDITIONS NE32400 00 (CHIP) UNITS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA MIN 10.0 TYP MAX 0.35 0.6 0.7 16.0 11.0 dBm dBm 9.5 11.0 Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA dB dB 11.8 12.8 Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 15 40 70 -0.2 VP Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA V -2.0 -0.8 gm Transconductance at VDS = 2 V, IDS = 10 mA mS 45 60 IGSO Gate to Source Leakage Current at VGS = -3 V µA RTH (CH-C)2 Thermal Resistance (Channel-to-Case) °C/W 0.5 10 260 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories NE32400 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS VDS Drain to Source Voltage VGSO Gate to Source Voltage IDS Drain Current TYPICAL NOISE PARAMETERS1,2 (TA = 25°C) VDS = 2 V, IDS = 10 mA UNITS RATINGS V 4.0 FREQ. NFOPT GA V -3.0 (GHz) (dB) (dB) MAG ANG Rn/50 mA IDSS 1 0.30 22.0 0.81 10 0.39 0.31 19.0 0.79 17 0.36 ΓOPT IGRF Gate Current µA 200 2 TCH Channel Temperature °C 175 4 0.35 16.0 0.75 31 0.33 TSTG Storage Temperature °C -65 to +175 6 0.38 14.2 0.72 45 0.30 200 8 0.43 12.9 0.70 59 0.27 10 0.50 12.0 0.68 77 0.24 12 0.60 11.0 0.66 92 0.22 14 0.71 10.6 0.64 108 0.19 16 0.85 10.0 0.62 126 0.18 18 1.0 9.5 0.58 140 0.15 20 1.2 9.0 0.55 153 0.13 22 1.5 8.6 0.52 164 0.11 24 1.8 8.3 0.49 175 0.10 26 2.1 7.9 0.48 -176 0.08 28 2.4 7.6 0.46 -168 0.07 30 2.8 7.3 0.46 -160 0.05 PT2 Total Power Dissipation mW Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With chip mounted on an alumina heat sink (size: 3 x 3 x 0.6 mm thick) TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Power Dissipation, PT (mW) 250 200 Notes: 1. Noise Parameters include Bond Wires. Gate: Total 2 wires, 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wires, 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wires, 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Data at 28 and 30 GHz is extrapolated, not measured. Infinite Heat sink 150 100 50 0 0 25 50 75 100 125 150 175 200 Ambient Temperature, TA (°C) 50 VGS 0.0 V 1.4 14 1.2 13 -0.15 V 30 -0.30 V 20 10 Noise Figure, NF (dB) Drain Current, IDS (mA) 40 12 1 NF 11 0.8 GA 0.6 10 0.4 9 0.2 8 -0.45 V -0.60 V 0 0 0 1 2 3 Drain to Source Voltage, VDS (V) 7 0 5 10 15 20 25 Drain Current, IDS (mA) 30 35 Associated Gain, GA (dB) NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE NE32400 TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTLINE DIMENSIONS (Units in µm) NE32400 CHIP TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 2.0 V 400 ±40 64 56 112 61 Transconductance, gm (mS) 100 53 D D 80 60 350 ±35 S 40 G G S 60 150 20 96 0 0 5 10 15 20 25 35 30 40 45 50 Drain Current, IDS (mA) 41 113 84 45 47 40 Chip Thickness: 140 µm Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER NE32400 NE32400N NE32400M IDSS Range (mA) 15-70 mA 15-45 mA 45-70 mA NE32400 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C) j50 j100 j25 +120˚ +90˚ 5 +60˚ 4 j10 3 +150˚ S11 30 GHz +30˚ 2 S22 .1 GHz 0 1 S11 .1 GHz +180˚ – S22 30 GHz S21 .1 GHz .05 S12 .1 GHz .15 .2 .25 0˚ S21 S12 30 GHz 30 GHz -j10 Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) -j100 -j25 -30˚ -150˚ -60˚ -120˚ -j50 -90˚ VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 (GHz) MAG ANG 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 26.0 28.0 30.0 .999 .999 .999 .997 .989 .978 .967 .947 .927 .909 .891 .873 .856 .838 .820 .803 .786 .769 .753 .736 .721 .705 .691 .662 .635 .610 .587 .565 -1.3 -2.5 -6.1 -11.9 -23.1 -33.7 -43.7 -53.1 -62.2 -70.8 -79.0 -86.8 -94.3 -101.5 -108.4 -115.0 -121.4 -127.5 -133.5 -139.2 -144.7 -150.1 -155.3 -165.2 -174.6 176.5 168.1 160.0 MAG 5.039 5.021 4.966 4.876 4.702 4.535 4.375 4.222 4.075 3.933 3.797 3.666 3.540 3.418 3.301 3.188 3.079 2.973 2.871 2.773 2.677 2.585 2.495 2.324 2.163 2.011 1.867 1.732 S12 ANG 179.0 178.0 175.1 170.4 161.2 152.3 143.8 135.6 127.8 120.2 112.8 105.8 98.9 92.3 86.0 79.8 73.8 68.1 62.5 57.1 51.8 46.7 41.7 32.3 23.3 14.8 6.8 0.8 S22 K MAG ANG MAG ANG .002 .004 .008 .016 .030 .042 .052 .062 .071 .079 .086 .092 .099 .104 .109 .114 .119 .123 .127 .131 .135 .138 .142 .148 .153 .159 .163 .168 89.2 88.6 86.7 83.6 77.3 70.9 64.7 58.8 53.1 47.8 42.9 38.3 34.2 30.4 26.9 23.8 20.9 18.4 16.1 14.0 12.1 10.4 8.9 6.3 4.2 2.4 1.0 0.1 .617 .617 .617 .617 .614 .611 .606 .600 .593 .585 .576 .567 .557 .547 .536 .525 .514 .503 .492 .481 .470 .460 .450 .433 .419 .410 .406 .407 -0.7 -1.4 -4.2 -8.4 -15.4 -22.4 -29.4 -36.0 -41.2 -46.1 -51.0 -55.8 -60.5 -65.1 -69.6 -73.9 -78.2 -82.4 -86.6 -90.6 -94.5 -98.3 -102.0 -109.1 -115.9 -122.3 -128.3 -133.9 .05 .03 .01 .01 .04 .07 .09 .12 .16 .20 .23 .26 .29 .32 .35 .37 .40 .43 .45 .48 .51 .54 .57 .64 .71 .76 .85 .92 S21 MAG2 (dB) (dB) 14.0 14.0 13.9 13.8 13.4 13.1 12.8 12.5 12.2 11.9 11.6 11.3 11.0 10.7 10.4 10.1 9.8 9.5 9.2 8.8 8.5 8.2 7.9 7.3 6.7 6.1 5.4 4.8 34.1 31.4 27.7 24.9 22.0 20.4 19.2 18.3 17.6 17.0 16.4 16.0 15.5 15.1 14.8 14.4 14.1 13.8 13.5 13.2 13.0 12.7 12.5 12.0 11.5 11.0 10.6 10.1 Notes: 1. S Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE32400 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C) VDS = 2 V, IDS = 20 mA FREQUENCY S11 S21 (GHz) MAG ANG 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 26.0 28.0 30.0 .999 .999 .998 .995 .982 .965 .945 .923 .900 .878 .856 .835 .816 .797 .780 .764 .749 .734 .720 .706 .692 .679 .665 .637 .609 .583 .562 .552 -1.4 -2.7 -6.7 -13.2 -25.6 -37.1 -47.9 -58.1 -67.6 -76.5 -84.9 -92.8 -100.2 -107.3 -113.9 -120.3 -126.3 -132.1 -137.7 -143.1 -148.2 -153.3 -158.2 -167.7 -176.9 174.1 165.2 156.4 MAG 6.161 6.156 6.121 6.030 5.811 5.579 5.345 5.120 4.902 4.692 4.493 4.303 4.122 3.951 3.788 3.634 3.488 3.350 3.219 3.095 2.977 2.865 2.759 2.562 2.384 2.222 2.076 1.942 S12 ANG 178.9 177.8 174.5 169.2 159.3 149.9 141.0 132.6 124.6 117.0 109.7 102.8 96.1 89.7 83.6 77.7 72.0 66.5 61.1 56.0 51.0 46.2 41.5 32.5 23.9 15.7 7.7 0.0 S22 MAG ANG MAG ANG .002 .003 .006 .013 .027 .039 .049 .058 .066 .073 .079 .085 .090 .095 .099 .103 .107 .111 .115 .119 .123 .126 .130 .138 .147 .157 .167 .180 89.3 88.6 86.5 83.2 76.8 70.7 65.0 59.7 54.7 50.0 45.7 41.7 38.0 34.6 31.4 28.6 26.0 23.6 21.5 19.6 17.9 16.4 15.1 12.8 11.1 9.6 8.4 7.1 .554 .553 .550 .545 .535 .525 .516 .507 .498 .489 .481 .473 .465 .457 .450 .443 .436 .429 .423 .417 .411 .405 .399 .389 .380 .370 .362 .354 -0.6 -1.5 -3.7 -7.4 -15.5 -22.9 -30.3 -37.7 -42.2 -47.2 -52.1 -56.8 -61.4 -65.9 -70.3 -74.5 -78.6 -82.7 -86.6 -90.4 -94.1 -97.8 -101.3 -108.1 -114.6 -120.8 -126.7 -132.2 MAG2 K |S21| (dB) (dB) .007 .01 .03 .06 .09 .13 .16 .19 .23 .27 .31 .34 .37 .40 .43 .46 .48 .51 .54 .56 .59 .61 .64 .70 .75 .80 .84 .86 15.8 15.8 15.7 15.6 15.3 14.9 14.6 14.2 13.8 13.4 13.0 12.7 12.3 11.9 11.6 11.2 10.8 10.5 10.1 9.8 9.5 9.1 8.8 8.2 7.5 6.9 6.3 5.7 35.6 32.8 29.9 26.6 23.4 21.6 20.4 19.5 18.7 18.1 17.6 17.1 16.6 16.2 15.8 15.5 15.1 14.8 14.5 14.2 13.8 13.6 13.3 12.7 12.1 11.5 10.9 10.3 Notes: 1. S Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE