GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 24 • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76184AS is suitable for DBS, TVRO, GPS and other commercial applications. Optimum Noise Figure, NFOPT (dB) 4 21 3.5 GA 3 18 2.5 15 2 12 9 1.5 1 6 NF Associated Gain, GA (dB) • LOW NOISE FIGURE: 0.8 dB typical at 4 GHz 3 0.5 0 0 1 10 20 Frequency, f (GHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL NF1 PARAMETERS AND CONDITIONS TYP MAX dB 0.8 1.4 dB 12.0 dBm dBm 12.5 15.0 Gain at P1dB, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA dB dB 11.5 13.5 Saturated Drain Current at VDS = 3 V, VGS = 0 mA 30 60 100 -0.5 Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz GA1 Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz P1dB Output Power at 1 dB Gain Compression Point, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA G1dB IDSS NE76184AS 84AS UNITS MIN VP Pinch Off Voltage at VDS = 3 V, ID = 100 µA V -3.0 -1.1 gm Transconductance at VDS = 3 V, ID = 10 mA mS 20 45 IGSO RTH Gate to Source Leak Current at VGS = -5 V Thermal Resistance µA 10 °C/W 300 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen. California Eastern Laboratories NE76184AS ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5 VGDO Gate to Drain Voltage V -5 VGSO Gate to Source Voltage V -6 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 3 V, IDS = 10 mA ΓOPT FREQ. NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 1.0 0.55 18.0 0.92 19 0.60 IDSS 2.0 0.60 15.0 0.81 40 0.55 IDS Drain Current mA TCH Channel Temperature °C 150 4.0 0.80 12.0 0.66 82 0.35 TSTG Storage Temperature °C -65 to +150 6.0 1.15 10.0 0.54 125 0.25 mW 300 PT Total Power Dissipation Note: 1.Operation in excess of any one of these parameters may result in permanent damage. 8.0 1.60 8.5 0.46 167 0.10 10.0 2.15 7.5 0.41 -152 0.25 12.0 2.70 6.5 0.41 -108 0.48 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 3 V, f = 4 GHz TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE GA 300 250 Infinite Heat sink 200 150 13 2 12 11 1.5 NF 10 9 1 100 Free Air 8 50 7 0.5 0 0 25 50 75 100 125 150 175 0 200 10 20 Ambient Temperature, TA (°C) 40 50 60 TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 3 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 75 Transconductance, gm (mS) 100 Drain Current, IDS (mA) 30 Drain Current, IDS (mA) 80 VGS 0 60 -0.2 40 -0.4 20 -0.6 0 -0.8 -1.0 0 1 2 3 4 Drain to Source Voltage, VDS (V) 60 45 30 15 0 5 0 20 40 60 80 Drain Current, IDS (mA) 100 Associated Gain, GA (dB) 14 350 Noise Figure, NF (dB) Total Power Dissipation, PT (mW) 15 2.5 400 NE76184AS TYPICAL SCATTERING PARAMETERS1 (TA = 25°C) VDS = 3 V, IDS = 10 mA FREQUENCY S11 S21 S12 (GHz) MAG ANG MAG ANG MAG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.999 0.999 0.990 0.970 0.932 0.884 0.784 0.695 0.620 0.571 0.545 0.535 0.543 0.569 0.604 0.641 0.667 0.680 0.692 0.700 0.696 0.677 -3.0 -7.0 -16.0 -31.0 -46.0 -61.0 -89.0 -118.0 -145.0 -172.0 163.0 139.0 117.0 96.0 77.0 61.0 47.0 33.0 20.0 6.0 -8.0 -20.0 3.859 3.837 3.815 3.754 3.626 3.494 3.179 2.873 2.595 2.329 2.099 1.903 1.740 1.586 1.433 1.295 1.162 1.049 0.970 0.884 0.799 0.730 176.0 174.0 165.0 152.0 138.0 126.0 101.0 78.0 57.0 37.0 19.0 1.0 -16.0 -33.0 -50.0 -66.0 -81.0 -97.0 -111.0 -127.0 -142.0 -157.0 0.003 0.007 0.024 0.040 0.058 0.076 0.097 0.114 0.121 0.124 0.124 0.124 0.127 0.131 0.138 0.142 0.153 0.160 0.171 0.181 0.191 0.199 S22 ANG 87.0 84.0 75.0 69.0 59.0 49.0 34.0 20.0 8.0 -3.0 -11.0 -17.0 -23.0 -29.0 -34.0 -41.0 -49.0 -57.0 -67.0 -79.0 -90.0 -102.0 MAG 0.770 0.763 0.756 0.741 0.720 0.696 0.638 0.574 0.517 0.472 0.440 0.423 0.413 0.411 0.419 0.447 0.486 0.525 0.566 0.603 0.639 0.666 K ANG -2.0 -4.0 -10.0 -19.0 -28.0 -36.0 -52.0 -67.0 -82.0 -98.0 -113.0 -129.0 -146.0 -166.0 173.0 153.0 136.0 119.0 103.0 88.0 73.0 61.0 S21 (dB) 0.06 0.04 0.14 0.15 0.24 0.32 0.47 0.60 0.75 0.90 1.04 1.15 1.21 1.22 1.19 1.15 1.06 1.03 0.94 0.88 0.87 0.88 11.7 11.6 11.6 11.4 11.1 10.8 10.0 9.1 8.2 7.3 6.4 5.5 4.8 4.0 3.1 2.2 1.3 0.4 -0.2 -1.0 -1.9 -2.7 MAG1 (dB) 31.0 27.3 22.0 19.7 17.9 16.6 15.1 14.0 13.3 12.7 11.0 9.4 8.5 7.9 7.4 7.2 7.3 7.0 7.5 6.8 6.2 5.6 VDS = 3 V, IDS = 30 mA FREQUENCY S21 S11 (GHz) MAG ANG MAG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.999 0.998 0.988 0.958 0.909 0.850 0.738 0.646 0.579 0.544 0.530 0.531 0.550 0.581 0.617 0.658 0.681 0.695 0.703 0.706 0.704 0.676 -4.0 -7.0 -18.0 -35.0 -52.0 -68.0 -99.0 -129.0 -157.0 176.0 152.0 129.0 108.0 88.0 71.0 56.0 42.0 29.0 16.0 2.0 -11.0 -25.0 5.192 5.148 5.088 4.937 4.698 4.446 3.901 3.407 2.996 2.648 2.359 2.120 1.928 1.748 1.574 1.427 1.287 1.168 1.079 0.987 0.899 0.811 S12 ANG 176.0 174.0 164.0 149.0 135.0 122.0 97.0 74.0 54.0 35.0 17.0 0.0 -16.0 -33.0 -49.0 -64.0 -80.0 -95.0 -109.0 -125.0 -140.0 -154.0 MAG 0.003 0.007 0.017 0.034 0.049 0.062 0.078 0.091 0.098 0.104 0.110 0.117 0.126 0.138 0.149 0.159 0.170 0.181 0.193 0.202 0.210 0.218 S22 ANG 86.8 83.6 75.0 68.0 60.0 51.0 38.0 26.0 16.0 8.0 3.0 -2.0 -9.0 -16.0 -23.0 -32.0 -41.0 -50.0 -63.0 -75.0 -87.0 -101.0 MAG 0.702 0.686 0.676 0.656 0.633 0.607 0.550 0.494 0.444 0.408 0.382 0.371 0.365 0.365 0.374 0.405 0.445 0.487 0.526 0.565 0.602 0.634 K ANG -3.0 -4.0 -10.0 -19.0 -28.0 -36.0 -51.0 -65.0 -79.0 -94.0 -110.0 -126.0 -144.0 -164.0 174.0 153.0 135.0 119.0 103.0 88.0 74.0 60.0 0.04 0.06 0.15 0.21 0.29 0.39 0.56 0.73 0.90 1.03 1.12 1.17 1.16 1.12 1.08 1.00 0.95 0.90 0.85 0.82 0.80 0.86 S21 MAG1 (dB) (dB) 14.3 14.2 14.1 13.8 13.4 12.9 11.8 10.6 9.5 8.4 7.4 6.5 5.7 4.8 3.9 3.0 2.1 1.3 0.6 -0.1 -0.9 -1.8 32.3 28.6 24.7 21.6 19.8 18.5 16.9 15.7 14.8 12.9 11.1 10.0 9.3 8.9 8.4 9.0 8.7 8.0 7.4 6.8 6.3 5.7 Note: 1. Gain Calculations: |S21| (K ± MAG = |S12| K 2- 1 MAG = Maximum Available Gain MSG = Maximum Stable Gain ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76184AS OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84AS 1.78 ± 0.2 S 1.78 ± 0.2 D J S 0.5 ± 0.1 (ALL LEADS) G 1.0 ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. ORDERING INFORMATION PART NUMBER QTY PACKAGE LEAD LENGTH NE76184AS Bulk 84AS 1.0 mm NE76184A-TI 1K/Reel 84AS 1.0 mm NE76184A-SL Bulk/up to 1K 84A-SL 1.7 mm EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE