DATA SHEET COMPOUND FIELD EFFECT TRANSISTOR ARRAY µPA1550 N-CHANNEL POWER MOS FET ARRAY FOR SWITCHING µPA1550 is a N-channel vertical power MOS FET and this PACKAGE DRAWING (UNIT: mm) switching device is available for direct drive by output of 5 V power supply IC. This device features low on-resistance and excellent switching characteristic, and is ideal for control of devices such as mortars, solenoid, or ramp. FEATURES • Gate drive available at logic level (VGS = 4 V) • High current capacity and low on-resistnace ID(pulse) = ±20 A RDS(on) = 0.09 Ω TYP. @VGS = 10 V RDS(on) = 0.11 Ω TYP. @VGS = 4 V ELECTRODE CONNECTION • Easy to mount the printing board due to 2.54 mm (0.1 inch) interval of lead pins • Small dimension and no electrode exposure except lead pins enable the high density mounting. ORDERING INFORMATION Part Number Package Quality µPA1550H 10-pin SIP Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2, 4, 6, 8 : Gate (G) 3, 5, 7, 9 : Drain (D) 1, 10 : Source (S) INTERNAL EQUIVALENT CIRCUIT The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16142EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 µPA1550 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Drain to source voltage VDSS VGS = 0 30 V Gate to source voltage VGSS VDS = 0 ±20 V Drain current (DC) ID(DC) TC = 25°C ±5 A/unit Drain current (pulse) ID(pulse) PW ≤ 10 µs duty cycle ≤ 1 % ±20 A/unit W Total power dissipation PT1* TC = 25°C 3.5 Total power dissipation PT2* Ta = 25°C 28 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C * When all 4 elements are ON. ELECTRICAL CHARACTERISTICS (VCC = 5V, Ta = 25°°C) Parameter Symbol Conditions TYP. MAX. Unit Drain cutoff current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate cutoff voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 2.5 V Forward transfer admittance yts VDS = 10 V, ID = 3 A 4.0 Drain to source on-state resistance RDS(on)1 VGS = 10 V, ID = 3 A 90 100 mΩ Drain to source on-state resistance RDS(on)2 VGS = 4 V, ID = 3 A 110 150 mΩ 5.0 S Input capacitance Ciss VDS = 10 V 900 pF Output capacitance Coss VGS = 0 V 400 pF Return capacitance Crss f = 1 MHz 100 pF Turn-on delay time td(on) ID = 3 A VGS(on) = 10 V VDD = 5 Ω RL = 5 Ω, Rin = 10 Ω Refer to the test circuit. 10 ns 40 ns 110 ns 30 ns Rise time Turn-off delay time Fall time tr td(off) tf TEST CIRCUIT DIAGRAM: SWITCHING TIME 2 MIN. Data Sheet G16142EJ1V0DS µPA1550 TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet G16142EJ1V0DS 3 µPA1550 4 Data Sheet G16142EJ1V0DS µPA1550 Data Sheet G16142EJ1V0DS 5 µPA1550 • The information in this document is current as of July, 2001. 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