UPB581B UPB581C DIVIDE- BY- 2 PRESCALER FEATURES TEST CIRCUIT • HIGH FREQUENCY OPERATION TO 2.8 GHz UPB581B,C • WIDE BAND OPERATION VCC • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% • COMPLEMENTARY OUTPUTS IN 1 8 2 7 3 6 4 5 * OUT DESCRIPTION The UPB581 series of devices are divide-by-2 silicon bipolar digital prescalers. They feature high frequency response and operate from a single 5 volt supply. The series is available in two package styles: 8 lead ceramic flat package (UPB581B) and an 8 pin DIP (UPB581C). Applications include: frequency synthesis, division and scaling. Note: All capacitors are 2200 pF, All resistors are 50 Ohms. *Pin 8 is not connected for UPB581C. ELECTRICAL CHARACTERISTICS (VCC = 5.0 ±0.5 V, ZS = ZL = 50 Ω) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPB581B BF08 UNITS MIN TYP MAX MIN TYP MAX 30 40 15 30 40 ICC Power Supply Current mA 15 fIN Frequency Response at PIN = -10 to -5 dBm1 PIN = -5 to 0 dBm1 PIN = 0 to +5 dBm1 PIN = -5 to +10 dBm2 PIN = -5 to +10 dBm3 PIN = -3 to +10 dBm4 GHz GHz GHz GHz GHz GHz 0.5 0.5 0.5 Input Power at fIN = 0.5 to 2.4 GHz1 fIN = 0.5 to 2.6 GHz1 fIN = 0.5 to 2.8 GHz1 fIN = 0.5 to 2.2 GHz2 fIN = 0.5 to 2.4 GHz3 fIN = 0.5 to 2.4 GHz4 dBm dBm dBm dBm dBm dBm -10 -5 0 Output Power5 dBm -12 Thermal Resistance, Junction to Case °C/W PIN POUT RTH (J-C) UPB581C C08 2.4 2.6 2.8 0.5 0.5 0.5 2.2 2.4 2.4 -5 -5 -3 +10 +10 +10 +5 +5 +5 -8 -12 -8 25 Notes: 1. TA = -40 to +85°C. 4. TA = -20 to +70° C, VCC = 5.0 ±0.25 Volts. 2. TA = -35 to +85°C. 5. TA = +25°C, fIN = 2.0 GHz, PIN = 0 dBm. 3. TA = -20 to +65 °C, VCC = 5.0 ±0.25 Volts. California Eastern Laboratories UPB581B, UPB581C ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS RECOMMENDED OPERATING CONDITIONS VCC Supply Voltage V -0.5 to 6.0 UNITS RATINGS VIN Input Voltage V -0.5 to VCC + 0.5 VCC Supply Voltage V 4.5 to 5.5 PIN Input Power dBm +10 TOP PD Power Dissipation UPB581B2 UPB581C mW mW 1500 600 Operating Temperature UPB581B UPB581C °C °C -40 to +85 -20 to +75 TOP TSTG Operating Temperature UPB581B UPB581C °C °C -55 to +125 -55 to +85 Storage Temperature UPB581B UPB581C °C °C -65 to +200 -55 to +125 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. TA = Absolute Maximum Operating Temperature. TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise noted.) SYMBOL PARAMETER Note: Because of the high internal gain and gain compression of the UPB581, this device is prone to self-oscillation in the absence of an RF input signal. If the device will be used in an application where DC power will be applied in the absence of an RF input signal, this self-oscillation can be suppressed by any of the following means: * Add a shunt resistor from the RF input line to ground. The blocking capacitor should be between the resistor and the UPB581, but physical separation should be minimized. Typically a resistor value between 50 and 100 ohms will suppress the selfoscillation. * Apply a DC offset voltage of +3.0 volts to the INPUT pin. The voltage source should be isolated from the INPUT pin by a series 1000 ohm resistor. * Apply a DC offset voltage of +1.5 volts to the BYPASS pin. The voltage source should be isolated from the BYPASS pin by a series 1000 ohm resistor. All these approaches reduce the input sensitivity of the UPB581 (by as much as 3 dB for the example of a 50 ohm shunt resistor), but otherwise have no affect on the reliability or other electrical characteristics of this device. UPB581B INPUT POWER vs. FREQUENCY UPB581C INPUT POWER vs. FREQUENCY 20 20 10 10 0 Input Power, PIN (dBm) Input Power, PIN (dBm) PIN MAX Guaranteed Operating Window -10 -20 * Guaranteed Operating Window 0 -10 PIN MIN -20 RESPONSE CURVE CONDITION VCC = 5 V VCC = 5 V -30 -30 0 0.5 1 1.5 2 2.5 3 3.5 Frequency, f (GHz) UPB581 SSB PHASE NOISE vs. OFFSET FROM CARRIER fIN = 500 MHz 0.5 1 2 5 Frequency, f (GHz) * See special conditions in Electrical Characteristics Table. UPB581C OUTPUT POWER vs. INPUT POWER -80 0 VCC = 5 V fIN = 2 GHz Output Power, POUT (dBm) SSB Phase Noise (dBc/Hz) -90 -100 -110 -120 -130 -140 -150 -160 -10 1/2 fIN -20 -30 fIN -40 -170 -180 01 10 100 1K 10K Offset from Carrier (Hz) 100K 1M -20 -10 0 10 Input Power, PIN (dBm) 20 UPB581B, UPB581C TYPICAL PERFORMANCE CURVES UPB581C INPUT POWER vs. FREQUENCY AND TEMPERATURE UPB581B INPUT POWER vs. FREQUENCY AND TEMPERATURE 20 20 10 Input Power, PIN (dBm) Input Power, PIN (dBm) TA = 75˚C TA = 25˚C TA = -25˚C TA = 85˚C TA = 25˚C TA = -20˚C 0 VCC = 5 V -10 -20 10 VCC = 5 V 0 -10 -20 -30 -30 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 3 UPB581C CIRCUIT CURRENT vs. TEMPERATURE AND VOLTAGE VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V 80 Circuit Current, ICC (mA) Output Power, POUT (dBm) UPB581C OUTPUT POWER vs. TEMPERATURE AND VOLTAGE 10 2 Frequency, f (GHz) Frequency, f (GHz) 0 -10 -20 60 40 20 0 -30 -25 0 25 50 Ambient Temperature, TA (°C) 75 -25 0 25 50 75 Ambient Temperature, TA (°C) UPB581B, UPB581C OUTLINE DIMENSIONS (Units in mm) UPB581C PACKAGE OUTLINE C08 UPB581B PACKAGE OUTLINE BF08 8 7.0±0.5 1.27 1.27 1.27 ±0.1 ±0.1 ±0.1 8 7 6 6 7 5 1.7 MAX PIN CONNECTIONS 1. VCC 5. GND 2. Input 6. Output 1 3. Bypass 7. Output 2 4. GND 8. NC 5 1 3 2 4 10.16 MAX 10.4±0.5 2.6 4.4±0.2 7.62 0.9 MIN 6.4 4.31 MAX 5.08 MAX 1 2 3 4 0.51 MIN +0.05 0.2 -0.02 0.4 3.2 ± 0.3 1.4 MIN 5.0±0.2 2.54 0.50 PIN CONNECTIONS 1. VCC 5. GND 2. Input 6. Output 1 3. Bypass 7. Output 2 4. GND 8. VCC +0.10 0.25 -0.05 1.27 0 ~15˚ INTERNAL SCHEMATIC VCC UPB581B INPUT AND OUTPUT S-PARAMETERS Q4 Q5 Q15 Q6 Q7 Q8 Q9 Q19 Q20 Q17 Q18 S11 MAG 0.732 0.713 0.691 0.674 0.659 0.655 0.642 0.617 0.583 0.537 0.488 0.435 0.377 0.305 0.245 Freq ANG -16 -32 -47 -62 -77 -92 -108 -125 -142 -159 -176 167 149 132 115 (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 Q26 Q27 Q2 (GHz) 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 Q30 Q1 VCC = 5.0 V, ICC = 30 mA Freq Q29 Q16 S22 MAG 0.174 0.207 0.227 0.257 0.284 0.310 0.332 0.347 0.377 0.367 0.386 0.389 0.406 0.363 0.428 EXCLUSIVE NORTH AMERICAN AGENT FOR ANG 168 138 114 96 81 67 55 41 33 17 11 -10 -10 -28 -30 Q22 VIN Q10 Q11 Q21 Q31 Q32 Q33 Q34 OUT1 Q3 Q14 Q24 OUT2 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -11/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE