LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • HERMETIC SEALED PACKAGE ASSURES HIGH RELIABILITY • WIDE OPERATING TEMPERATURE RANGE DESCRIPTION The UPG100 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. This device is suitable for low noise IF gain stages in microwave communication and measurement equipment. Power Gain, GP (dB) • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω VDD = +5 V, VGG = -5 V TA = -25˚C TA = +25˚C TA = +75˚C 10 5 Noise Figure, NF (dB) GP NF 0 0 10 20 50 100 200 500 1000 5000 Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, VDD = +5V, VGG = -5 V, f = 0.05 to 3 GHz, Zs = ZL = 50 Ω) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPG100B, UPG100P B08, CHIP UNITS MIN TYP MAX IDD Drain Bias Current (RF off) mA 30 45 60 IGG Gate Bias Current (RF off) mA 0.7 1.5 GP Power Gain dB ∆GL Flatness Gain dB NF Noise Figure dB P1dB Output Power at 1 dB gain compression point RLIN dBm 14 16 ±1.5 2.7 +3 Input Return Loss dB 7 10 RLOUT Output Return Loss dB 7 10 ISOL Isolation dB 30 40 RTH (CH-C) Thermal Resistance (Channel to Case) °C/W 3.5 +6 33 California Eastern Laboratories UPG100B, UPG100P ABSOLUTE MAXIMUM RATINGS1 SYMBOLS PARAMETERS VDD RECOMMENDED OPERATING CONDITIONS UNITS RATINGS V +8 SYMBOLS UNITS MIN -8 VDD Drain Voltage V 4.5 5.0 5.5 VGG Gate Voltage V -5.5 -5.0 -4.5 PIN Input Power dBm TOP Operating Temperature -50 25 +80 Drain Voltage VGG (TA = 25°C) Gate Voltage V VIN Input Voltage V -3 to +0.6 PIN Input Power dBm +15 PT Total Power Dissipation2 W 1.5 Top Operating Temperature °C -65 to +125 TSTG Storage Temperature °C -65 to +175 PARAMETERS TYP MAX 10 °C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage. 2. TCASE (TC) ≤ 125°C TYPICAL PERFORMANCE CURVES (TA = 25°C) INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY ISOLATION vs. FREQUENCY 0 0 VDD = +5V VGG = -5V VDD = + 5 V VGG = - 5 V 10 Isolation, ISOL (dB) Return Loss, RL (dB) 10 RLOUT 20 RLIN 30 20 30 40 40 50 10 20 50 100 200 500 1000 5000 10 20 50 100 200 500 1000 5000 Frequency, f (MHz) Frequency, f (MHz) D. C. POWER DERATING CURVE OUTPUT POWER vs. INPUT POWER 2.0 Total Power Dissipation, PT (W) Output Power, POUT (dBm) VDD = +5v VGG = -5V +10 f = 1 GHz f = 2 GHz f = 3 GHz 0 1.5 1.0 0.5 0 -10 -20 -10 Input Power, PIN (dBm) 0 50 100 150 Case Temperature, TC (C°) 200 UPG100B, UPG100P TYPICAL PERFORMANCE CURVES (TA = 25°C) EQUIVALENT CIRCUIT VDD Output Power, POUT (dBm) 923 MHz P1dB = 8.6 dBm 0 10 2.2 GHz P1dB = 7.3 dBm 923 MHz 2.2 GHz 0 -20 -40 -10 ∆f = 5 MHz -20 -30 -60 IDD = 42 mA VDD = +5 V VGG = -5 V -20 -10 0 3rd Order Intermodulation, IM3(dBm) 3RD ORDER INTERMODULATION and OUTPUT POWER vs. INPUT POWER L1 C1 C2 RL1 RF1 RL2 R F2 IN R1 L2 C3 R2 OUT C4 R4 R3 R5 R6 10 Input Power, PIN (dBm) VGG TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPG100B VDD = 5.0 V VGG = -5.0 V Frequency S11 S21 S12 S22 k GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 0.301 0.209 0.194 0.186 0.183 0.185 0.182 0.157 0.159 0.138 0.135 0.143 0.150 0.158 0.172 0.189 0.204 0.200 0.216 0.229 0.231 0.226 0.207 0.164 0.212 0.305 -37.5 -32.2 -33.6 -40.0 -55.6 -63.1 -79.7 -94.8 -116.3 -128.1 -142.0 -156.0 -174.3 163.8 154.7 137.1 127.6 111.4 107.3 94.0 83.3 77.8 70.2 75.8 89.0 85.6 8.5 8.6 8.9 9.0 8.8 8.7 8.7 8.5 8.6 8.4 8.9 8.5 8.3 8.2 8.2 8.0 8.1 7.8 7.8 7.7 7.3 7.3 6.8 6.6 6.8 7.1 23.6 2.5 -17.8 -30.4 -45.6 -58.1 -71.7 -83.1 -95.5 -109.1 -123.1 -133.7 -148.1 -159.6 -171.5 173.5 162.5 148.6 136.0 123.4 109.8 96.6 84.4 74.8 67.6 51.7 0.009 0.008 0.008 0.009 0.010 0.009 0.012 0.011 0.009 0.010 0.009 0.009 0.009 0.010 0.011 0.014 0.014 0.015 0.017 0.019 0.022 0.025 0.027 0.031 0.029 0.022 18.5 7.7 0.1 2.8 -1.5 1.6 -7.3 -20.0 -21.6 -21.9 -9.8 -22.2 1.1 -22.8 -22.0 -29.1 -27.6 -35.1 -35.4 -38.1 -47.6 -55.7 -62.1 -84.1 -100.3 -100.7 0.094 0.048 0.029 0.026 0.023 0.022 0.030 0.034 0.028 0.028 0.033 0.039 0.039 0.047 0.056 0.062 0.071 0.082 0.088 0.099 0.110 0.118 0.127 0.116 0.070 0.013 -66.4 -61.5 -63.0 -69.6 -83.6 -110.9 -163.1 116.6 79.5 69.1 64.2 52.6 40.8 38.8 34.8 24.8 16.6 9.5 -1.4 -12.2 -25.0 -43.0 -64.2 -99.6 -145.6 176.5 S21 (dB) 5.9 7.0 6.8 6.0 5.6 6.2 4.7 5.2 6.4 5.9 6.2 6.5 6.6 6.0 5.4 4.3 4.2 4.1 3.6 3.3 2.9 2.6 2.6 2.4 2.5 3.0 18.6 18.7 19.0 19.1 18.8 18.8 18.8 18.6 18.6 18.5 19.0 18.5 18.4 18.2 18.3 18.1 18.2 17.9 17.8 17.7 17.3 17.3 16.7 16.4 16.7 17.1 UPG100B, UPG100P OUTLINE DIMENSIONS (Units in mm) TEST CIRCUIT VDD UPG 100B PACKAGE OUTLINE B08 1.27±0.1 1.27±0.1 1000 pF (LEADS 2, 4, 6, 8) 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 10.6 MAX 7 IN 5 100 pF* 100 pF* 1 OUT 5 1 3.8±0.2 3 2, 4, 6, 8 6 7 8 1000 pF** 3.8±0.2 10.6 MAX 1.7 MAX 0.2 +0.05 -0.02 VGG LEAD CONNECTIONS: 1. INPUT 2. GND 3. VGG 4. GND * Chip Capacitor **Recommended when cascading UPG100 with NEC's UPG100, 101, 103B's. 5. OUTPUT 6. GND 7. VDD 8. GND RECOMMENDED CHIP ASSEMBLY CONDITIONS UPG100P (CHIP) VDD GND DIE ATTACHMENT Atmosphere: Temperature: AuSn Preform: GND N2 gas 320± 5°C 0.5 x 0.5 x 0.05t (mm), 1 piece The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Epoxy Die Attach is not recommended. 1.0 mm IN OUT Base Material: CuW, Cu, Kovar (Other material should not be used) BONDING GND GND VGG GND Machine: Thermo-compression bonding. Ultrasonic bonding is not recommended. Wire: 30 µm diameter Au wire, 10 wires Temperature: 260 ± 5°C Strength: 31 ± 3g Atmosphere: N2 gas 1.3 mm Notes: Bonding Pad Size: 100 µm Square Distance between Bonding Pad Outer Edge and Die Edge: 70 µm Typical Chip Thickness: 140± 10 µm EXCLUSIVE NORTH AMERICAN AGENT FOR It is critical that GND points be connected to the ground with the shortest possible wire. RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -10/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE