THYRISTOR MODULE 20A / 300V to 800V PBH203 PBH206 PBH208 OUTLINE DRAWING FEATURES * Isolated Base * Thyristors and Diodes H-Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS φ * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:70g Symbol VDRM VDSM VRRM VRSM Parameter PBH206 PBH208 300 400 300 400 600 700 600 700 800 960 800 960 Conditions Average Rectified Output Current IO(AV) Surge On-State Current ITSM I Squared t Grade PBH203 I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor 50Hz Half Sine Wave condition Tc=60°C 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=100mA, diG/dt=0.2A/µs • Unit V V Max Rated Value Unit 20 A 160 A 128 A2s 100 A/µs 5 W 0.5 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2000 V M5 Screw 2.4 to 2.8 N •m - Electrical • Thermal Characteristics Characteristics VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 30A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 5 5 1.63 100 50 25 4 2.5 2 0.25 dv/dt VD=2/3VDRM Tj=125°C 100 tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1:Value Per Module tgt td tr IL IH Rth(j-c) Test Conditions VD=2/3VDRM Tj=125°C IG=100mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound Unit mA mA V mA V V V/µs 80 µs 6 2 4 70 50 µs µs µs mA 1.01 0.1 °C/W PBH20x OUTLINE DRAWING (Dimensions in mm) φ