THYRISTOR MODULE PBH308AC 30A / 800V OUTLINE DRAWING FEATURES * Isolated Base * Thyristors and Diodes H-Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:70g Symbol Conditions Average Rectified Output Current IO(AV) Surge On-State Current ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Gate Terminals Treatment Force Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Ftor Unit 800 960 800 960 VDRM VDSM VRRM VRSM Parameter I Squared t Grade PBH308AC 50Hz Half Sine Wave condition Tc=94°C 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs • V V Max Rated Value Unit 30 A 600 A 1800 A2s 100 A/µs 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V Greased M4 Screw 0.9 to 1.6 N •m M4 Screw 1.3 to 1.9 Insertion/Pulling out 45/32 N Electrical • Thermal Characteristics Characteristics VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 90A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 10 10 1.45 200 100 50 4 2.5 2 0.25 dv/dt VD=2/3VDRM Tj=125°C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1:Value Per Module tgt td tr IL IH Rth(j-c) Test Conditions VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound Unit mA mA V mA V V V/µs 100 µs 6 2 4 100 50 µs µs µs mA 0.44 0.1 °C/W PBH308AC OUTLINE DRAWING (Dimensions in mm)