MOSFET MODULE PDM505HC Dual 50A /500V OUTLINE DRAWING FEATURES Dimension(mm) * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating Approximate Weight : 220g MAXMUM RATINGS Ratings Symbol PDM505HC Unit Drain-Source Voltage (VGS=0V) Gate - Source Voltage VDSS VGSS 500 +/ - 20 50 (Tc=25°C) 35 (Tc=25°C) 100 Tc=25°C) 350 Tc=25°C) -40 to +150 -40 to +125 2000 3.0 2.0 V V Continuous Drain Current Duty=50% D.C. ID Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals IDM PD Tjw Tstg VISO FTOR ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Rth(j-c) Thermal Resistance, Case to Heatsink Rth(c-f) A W °C °C V N•m Min. Typ. Max. Unit 2.0 - 3.1 110 3.2 30 8.4 1.1 0.24 92 110 250 68 1.0 4.0 4.0 0.3 120 3.4 - mA VDS=VDSS,VGS=0V Tj=125°C, VDS=VDSS,VGS=0V VDS=VGS, ID=3mA VGS=+/- 20V,VDS=0V VGS=10V, ID=25A VGS=10V, ID=25A VDS=15V, ID=25A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=25A VGS= -5V, +10V RG= 5 ohm FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition A V µA m-ohm V S nF nF nF ns Min. Typ. Max. - 80 0.18 35 100 1.5 - Unit A A V ns µC Test Condition Min. Typ. Max. Unit MOS FET Diode Mounting surface flat, smooth, and greased - - 0.36 2.0 0.1 °C/W D.C. IS=50A IS=50A, -dis/dt=100A/µs PDM505HC Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage TC=25ı 250 s Pulse Test 60 6V 40 20 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=0V f=1MHz Ciss 8 6 4 Coss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) RG=5 VDD=250V TC=25ı 80 s Pulse Test tr 100 td(on) tf 50 1 2 5 10 20 DRAIN CURRENT ID (A) 50 100 Fig. 10 Maximum Safe Operating Area TC=25ı Tj=150ıMAX Single Pulse 200 4 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 1 60 Tj=25ı 40 0 0 0.3 0.6 0.9 1.2 1.5 SOURCE TO DRAIN VOLTAGE VSD (V) Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) DC 0.5 1 2 DRAIN CURRENT ID (A) 160 ID=25A VDD=250V TC=25ı 80 s Pulse Test tr td(on) 1 tf 0.5 0.2 0.05 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) - 311 - 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) 200 Fig. 9 Typical Reverse Recovery Characteristics 80 Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 2 0.2 600 Tj=125ı 1ms 10ms 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) 5 250 s Pulse Test 20 5 0 -40 0.1 100 s Operation in this area is limited by RDS (on) 15A td(off) 8 50 10 4 2 10 s 100 25A ID=35A 20 20 8 VDD= 100V 250V 400V 120 SOURCE CURRENT IS (A) SWITCHING TIME t (ns) 200 12 Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance 100 td(off) ID=50A 16 Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics 500 10 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 12 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 1000 0 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 10 0 15A 2 Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 12 2 25A 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 4 VGS=10V 250 s Pulse Test 16 SWITCHING TIME t ( s) 0 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 0 5V ID=50A NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] DRAIN CURRENT ID (A) 8V TC=25ı 250 s Pulse Test 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) VGS=10V IS=50A 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 80 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 200 IS=25A Tj=125ı trr 100 50 IR 20 10 5 1.8 0 100 200 300 400 -dis/dt (A/ s) 500 600 2 1 0.5 0.2 0.1 Per Unit Base Rth(j-c)=0.36ı/W 1 Shot Pulse 0.05 0.02 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 2 1 0.5 0.2 0.1 Per Unit Base Rth(j-c)=2.0ı/W 1 Shot Pulse 0.05 0.02 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10