Under development IGBT SPseries PTMB100A6C SixSix-Pack 100A 600V CIRCUIT OUTLINE DRAWING Dimension(mm) Approximate Weight : 330g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PTMB100A6C Unit VCES VGES IC ICP PC Tj Tstg VISO 600 +/ - 20 100 200 TBD -40 to +150 -40 to +125 2500 V V W °C °C V FTOR 2 N•m Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A Min. Typ. Max. 4.0 - 2.1 10000 0.15 0.25 0.2 0.45 1.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 100 200 A Symbol Test Condition Min. Typ. Max. VF trr IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=100A/µs - 1.9 0.15 2.4 0.25 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - TBD TBD °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c)