NIEC PTMB150A6C

IGBT SPseries
PTMB150A6C
SixSix-Pack 150A 600V
CIRCUIT
OUTLINE DRAWING
Dimension(mm)
Approximate Weight : 330g
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
1 ms
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
PTMB150A6C
Unit
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
600
+/ - 20
150
300
415
-40 to +150
-40 to +125
2500
V
V
W
°C
°C
V
FTOR
2
N•m
Symbol
ICES
IGES
VCE(sat)
VGE(th)
Cies
tr
ton
tf
toff
Test Condition
A
Min.
Typ.
Max.
4.0
-
2.1
15000
0.15
0.25
0.2
0.45
2.0
1.0
2.6
8.0
0.3
0.4
0.35
0.7
VCE=600V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=150A,VGE=15V
VCE=5V,IC=150mA
VCE=10V,VGE=0V,f=1MHz
VCC= 300V
RL= 2 ohm
RG= 5.1 ohm
VGE= +/- 15V
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
DC
1 ms
Forward Current
Characteristic
µs
Unit
150
300
A
Symbol
Test Condition
Min.
Typ.
Max.
VF
trr
IF=150A,VGE=0V
IF=150A,VGE=-10V,di/dt=150A/µs
-
1.9
0.15
2.4
0.25
Unit
V
µs
Test Condition
Min.
Typ.
Max.
Unit
Junction to Case
-
-
0.22
0.45
°C/W
Peak Forward Voltage
Reverse Recovery Time
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IF
IFM
Unit
mA
µA
V
V
pF
Symbol
IGBT
DIODE
Rth(j-c)
PTMB150A6C
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.1- Output Characteristics (Typical)
TC=25℃
300
VGE =20V
Collector to Emitter Voltage V CE (V)
Collector Current I C (A)
I C=60A
15V
250
TC=25℃
16
12V
10V
200
150
9V
100
50
8V
300A
14
150A
12
10
8
6
4
2
7V
0
0
2
4
6
8
0
10
0
4
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Voltage V CE (V)
150A
12
10
8
6
4
2
0
4
8
12
16
RL=2Ω
TC=25℃
16
350
12
250
10
8
200
VCE =300V
150
6
200V
100
2
50
0
20
0
0
150
300
450
600
Total Gate Charge Qg (nC)
100000
Fig.6- Collector Current vs. Switching Time (Typical)
1
VGE =0V
f=1MHZ
TC=25℃
50000
Cies
Coes
Cres
VCC=300V
R G=5.1Ω
VGE =±15V
TC=25℃
0.9
0.8
Switching Time t (μs)
Capacitance C (pF)
4
100V
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
10000
5000
2000
1000
500
0.7
0.6
0.5
toff
0.4
0.3
ton
tf
0.2
200
100
14
300
Gate to Emitter Voltage V GE (V)
20000
tr
0.1
0.2
0.5
1
2
5
10
20
Collector to Emitter Voltage
V CE
20
400
300A
14
0
16
50
(V)
100
200
0
0
40
80
Collector Current IC (A)
120
160
Gate to Emitter Voltage V GE (V)
Collector to Emitter Voltage V CE (V)
IC=60A
12
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
TC=125℃
16
8
Gate to Emitter Voltage V GE (V)
Collector to Emitter Voltage V CE (V)
PTMB150A6C
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
VCC=300V
I C=150A
VG=±15V
TC=25℃
TC=25℃
toff
ton
1
tr
0.5
tf
0.2
200
150
100
50
0.1
0.05
1
10
0
100
0
1
2
Series Gate Impedance R G (Ω)
500
3
Fig.10- Reverse Bias Safe Operating Area (Typical)
1000
I F=150A
TC=25℃
R G=5.1Ω
VGE =±15V
TC≦125℃
500
200
200
Collector Current I C (A)
trr
100
50
20
IRrM
10
4
Forward Voltage V F (V)
Fig.9- Reverse Recovery Characteristics (Typical)
100
50
20
10
5
2
1
0.5
0.2
200
400
600
800
1000
0.1
1200
0
200
-di/dt (A/μs)
400
Fig.11- Transient Thermal Impedance
FRD
2x10 -1
IGBT
1x10 -1
5x10 -2
2x10 -2
1x10 -2
5x10 -3
TC=25℃
2x10 -3
1x10 -3 -5
10
600
Collector to Emitter Voltage V CE (V)
5x10 -1
(℃/W)
0
(J-C)
5
Transient Thermal Impedance Rth
Peak Reverse Recovery Current I RrM (A)
Reverse Recovery Time trr (ns)
TC=125℃
250
Forward Current I F (A)
2
Switching Time t (μs)
(Typical)
300
1 Shot Pulse
10 -4
10 -3
10 -2
Time t (s)
10 -1
1
10 1
800