NIEC PTMB50B12

IGBT MODULE
PTMB50B12
SixSix-Pack 50A 1200V
CIRCUIT
OUTLINE DRAWING
12- fasten- tab No 110
Dimension(mm)
Approximate Weight : 550g
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
1 ms
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
PTMB50B12
Unit
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
1200
+/ - 20
50
100
250
-40 to +150
-40 to +125
2500
2
1.4
V
V
FTOR
Symbol
ICES
IGES
VCE(sat)
VGE(th)
Cies
tr
ton
tf
toff
Test Condition
A
W
°C
°C
V
N•m
Min.
Typ.
Max.
4.0
-
1.9
4200
0.25
0.40
0.25
0.80
1.0
1.0
2.4
8.0
0.45
0.70
0.35
1.10
VCE=1200V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=50A,VGE=15V
VCE=5V,IC=50mA
VCE=10V,VGE=0V,f=1MHz
VCC= 600V
RL= 12 ohm
RG= 20 ohm
VGE= +/- 15V
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
DC
1 ms
Forward Current
Characteristic
µs
Unit
50
100
A
Symbol
Test Condition
Min.
Typ.
Max.
VF
trr
IF=50A,VGE=0V
IF=50A,VGE=-10V,di/dt=100A/µs
-
1.9
0.2
2.4
0.3
Unit
V
µs
Test Condition
Min.
Typ.
Max.
Unit
Junction to Case
-
-
0.43
0.7
°C/W
Peak Forward Voltage
Reverse Recovery Time
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IF
IFM
Unit
mA
µA
V
V
pF
Symbol
IGBT
DIODE
Rth(j-c)
PTMB50B12
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.1- Output Characteristics (Typical)
TC=25℃
100
12V
15V
Collector Current I C (A)
75
9V
50
8V
25
7V
0
0
2
TC=25℃
16
I C=25A
10V
4
6
8
Collector to Emitter Voltage V CE (V)
VGE =20V
14
50A
12
10
8
6
4
2
0
10
0
4
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Voltage V CE (V)
8
6
4
2
8
12
16
700
14
600
12
500
10
8
400
VCE =600V
6
300
400V
4
200
200V
2
100
0
0
50
100
150
200
250
300
Gate to Emitter Voltage V GE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
Fig.6- Collector Current vs. Switching Time (Typical)
350
1.4
20000
VGE=0V
f=1MHZ
TC=25℃
10000
Cies
5000
Capacitance C (pF)
16
RL=12Ω
TC=25℃
0
20
2000
1000
Coes
500
200
Cres
100
VCC=600V
R G=20Ω
VGE=±15V
TC=25℃
1.2
Switching Time t (μs)
Collector to Emitter Voltage V CE (V)
10
4
20
tOFF
1
0.8
tf
0.6
0.4
50
0.2
20
0
tON
tr
0.1
0.2
0.5
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
50
100
200
0
10
20
30
Collector Current IC (A)
40
50
Gate to Emitter Voltage V GE (V)
50A
12
0
16
800
100A
14
0
12
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
TC=125℃
IC=25A
8
Gate to Emitter Voltage V GE (V)
Collector to Emitter Voltage V CE (V)
16
100A
PTMB50B12
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
(Typical)
10
VCC=600V
IC=50A
VGE=±15V
TC=25℃
TC=25℃
TC=125℃
90
toff
2
ton
1
tr
80
Forward Current I F (A)
5
Switching Time t (μs)
100
0.5
tf
0.2
70
60
50
40
30
20
0.1
0.05
10
5
10
20
50
100
200
0
300
0
1
2
4
Fig.10- Reverse Bias Safe Operating Area (Typical)
Fig.9- Reverse Recovery Characteristics (Typical)
500
500
200
IF=50A
TC=25℃
200
trr
100
Collector Current I C (A)
100
50
20
10
5
R G=20Ω
VGE=±15V
TC≦125℃
50
20
10
5
2
1
0.5
IRrM
2
1
0.2
0
50
100
150
200
250
0.1
300
0
400
800
1200
Collector to Emitter Voltage V CE (V)
-di/dt (A/μs)
fig11-Tansient Thermal Impedance
5
Tansient Thermal Impedance Rth (J-C) (゚C/W)
Peak Reverse Recovery Current I RrM (A)
Reverse Recovery Time trr (ns)
3
Forward Voltage VF (V)
Series Gate Impedance RG (Ω)
2
1
FRD
-1
5x10
IGBT
-1
2x10
-1
10
-2
5x10
-2
2x10
-2
Tc=25℃
10
-3
5x10
1 Shot
-3
2x10
-5
10
10
-4
-3
10
-2
10
Time t (s)
-1
10
1
10
1
1600