NIEC PTMB75B12

IGBT MODULE
PTMB75B12
SixSix-Pack 75A 1200V
CIRCUIT
OUTLINE DRAWING
12- fasten- tab No 110
Dimension(mm)
Approximate Weight : 550g
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
1 ms
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
PTMB75B12
Unit
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
1200
+/ - 20
75
150
400
-40 to +150
-40 to +125
2500
2
1.4
V
V
FTOR
Symbol
ICES
IGES
VCE(sat)
VGE(th)
Cies
tr
ton
tf
toff
Test Condition
A
W
°C
°C
V
N•m
Min.
Typ.
Max.
4.0
-
1.9
6300
0.25
0.40
0.25
0.80
2.0
1.0
2.4
8.0
0.45
0.70
0.35
1.10
VCE=1200V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=75A,VGE=15V
VCE=5V,IC=75mA
VCE=10V,VGE=0V,f=1MHz
VCC= 600V
RL= 8 ohm
RG= 13 ohm
VGE= +/- 15V
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
DC
1 ms
Forward Current
Characteristic
µs
Unit
75
150
A
Symbol
Test Condition
Min.
Typ.
Max.
VF
trr
IF=75A,VGE=0V
IF=75A,VGE=-10V,di/dt=150A/µs
-
1.9
0.2
2.4
0.3
Unit
V
µs
Test Condition
Min.
Typ.
Max.
Unit
Junction to Case
-
-
0.3
0.6
°C/W
Peak Forward Voltage
Reverse Recovery Time
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IF
IFM
Unit
mA
µA
V
V
pF
Symbol
IGBT
DIODE
Rth(j-c)
PTMB75B12
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.1- Output Characteristics (Typical)
TC=25℃
150
VGE=20V
IC=30A
Collector Current I C (A)
100
9V
75
50
8V
25
7V
0
2
4
6
8
Collector to Emitter Voltage V CE (V)
10V
15V
125
0
TC=25℃
16
12V
14
75A
12
10
8
6
4
2
0
10
0
4
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
12
10
8
6
4
2
8
12
16
RL=8Ω
TC=25℃
16
700
14
600
12
500
10
8
400
VCE =600V
6
300
400V
200
4
200V
2
100
0
0
20
0
100
Gate to Emitter Voltage V GE (V)
200
300
400
500
600
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
20000
10000
VGE=0V
f=1MHZ
TC=25℃
1.4
Cies
1.2
5000
2000
1000
Coes
500
200
Cres
100
1.6
Switching Time t (μs)
50000
Capacitance C (pF)
20
VCC=600V
R G=13Ω
VGE=±15V
TC=25℃
tOFF
1
0.8
tf
0.6
0.4
50
0.2
20
0
tON
tr
0.1
0.2
0.5
1
2
5
10
20
Collector to Emitter Voltage V CE (V)
50
100
200
0
25
50
Collector Current IC (A)
75
Gate to Emitter Voltage V GE (V)
75A
4
16
800
150A
14
0
12
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
TC=125℃
16
0
8
Gate to Emitter Voltage V GE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
IC=30A
150A
PTMB75B12
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10
2
ton
1
tr
0.5
tf
0.2
0.1
100
75
50
5
10
20
50
100
0
200
0
1
2
Fig.9- Reverse Recovery Characteristics (Typical)
4
Fig.10- Reverse Bias Safe Operating Area (Typical)
500
500
IF=75A
TC=25℃
200
trr
100
200
Collector Current I C (A)
100
50
20
10
5
RG=13Ω
VGE=±15V
TC≦125℃
50
20
10
5
2
1
0.5
I RrM
2
0.2
0
150
300
0.1
450
0
400
800
fig11-Tansient Thermal Impedance
5
2
1
5x10
2x10
FRD
-1
IGBT
-1
-1
1x10
5x10
2x10
1x10
5x10
2x10
-2
-2
-2
Tc=25℃
-3
1 Shot Pulse
-3
-5
10
1200
Collector to Emitter Voltage V CE (V)
-di/dt (A/μs)
Tansient Thermal Impedance Rth (J-C) (゚C/W)
Peak Reverse Recovery Current I RrM (A)
Reverse Recovery Time trr (ns)
3
Forward Voltage V F (V)
Series Gate Impedance RG (Ω)
1
TC=125℃
25
0.05
0.02
TC=25℃
125
toff
Forward Current I F (A)
Switching Time t (μs)
150
VCC=600V
IC=75A
VGE=±15V
TC=25℃
5
(Typical)
-4
10
10
-3
-2
10
Time t (s)
-1
10
1
10
1
1600