NTE2341(NPN) & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation, Ptot TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW TA = +25°C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 156K/W Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm x 10mm. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–EmitterBreakdown Voltage V(BR)CEO IC = 50mA, IB = 0 80 – – V Collector–BaseBreakdown Voltage V(BR)CBO IC = 100µA, IB = 0 100 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 – – V Collector Cutoff Current ICEO VCE = 40V, IB = 0 – – 500 nA ICBO VCB = 100V, IE = 0 – – 100 nA Emitter Cutoff Current IEBO VCE = 4V, IC = 0 – – 100 nA DC Current Gain hFE IC = 150mA, VCE = 10V 1000 – – IC = 500mA, VCE = 10V 2000 – – Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Transition Frequency Min Typ Max Unit – – 1.3 V IC = 1A, IB = 1mA – – 1.8 V IC = 1A, IB = 1mA, Note 3 – – 2.2 V IC = 500mA, VCE = 5V, f = 100MHz – 200 – MHz VCE(sat) IC = 500mA, IB = 0.5mA VBE(sat) fT NTE2341 (NPN) Test Conditions .135 (3.45) Min C B .210 (5.33) Max Seating Plane E NTE2342 (PNP) C .021 (.445) Dia Max .500 (12.7) Min B E C B E .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max