NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead for high gain performance. Features: D 175MHz D 12.5 Volts D POUT = 4W Minimum D GP = 12dB D Grounded Emitter Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mA Total Device Dissipation, Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.9°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 10mA, IB = 0 18 − − V V(BR)CES IC = 5mA, VBE = 0 36 − − V V(BR)EBO IC = 0, IE = 1mA 4 − − V µA OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current ICBO VCB = 15V, IE = 0 − − 250 hFE VCE = 5V, IC = 50mA 10 − 100 ON Characteristics DC Current Gain Dynamic Characteristics Output Power POUT VCE = 12.5V, f = 175MHz 4 − − W Common−Emitter Amplifier Power Gain GPE VCE = 12.5V, f = 175MHz 12 − − dB Output Capacitance Cob VCE = 15V, f = 1MHz − 180 230 pF Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Impedance Data Input Impedance Zin Clamping Impedance PIN= 200mW, VCC = 12 12.6V 6V Zcl f = 136MHz 3.0 − j3.8 f = 155MHz 4.0 − j2.0 f = 175MHz 4.3 − j5.8 f = 136MHz 12.8 − j11 f = 155MHz 11 − j14.8 f = 175MHz 13 − j20 .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Collector Emitter/Case 45° .031 (.793)