NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +175°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Collector−Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = ∞ 17 − − V Collector Cut−Off Current ICBO VCB = 25V, IE = 0 − − 2 mA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 1 mA DC Current Gain hFE VCE = 10V, IC = 0.2A 10 50 180 − Amplifier Power Out PO VCC 13.5V, f = 175MHz, Pin = 6W 28 32 − W Collector Efficiency ηC VCC = 13.5V, f = 175MHz, Pin = 6W 60 70 − % .300 (7.62) Min .157 (4.0) 0.39 (1.0) R C E .276 (7.0) Max .551 (14.0) E B .063 (1.6) R .100 (2.79) 6.46 (16.4) Max .709 (18.0) .205 (5.2) Max .276 (7.0) Max .118 (3.0) .076 (1.93) .866 (22.0)