NTE NTE5419

NTE5417 thru NTE5419
Silicon Controlled Rectifier (SCR)
10 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), VRRM
NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +110°C), VDRM
NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +80°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . 100A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Peak Off–State Current
Symbol
IRRM
IDRM
Maximum Peak On–State Voltage
DC Holding Current
VTM
IHOLD
Test Conditions
Min
Typ
Max
Unit
VRRM = Max, VDRM = Max,
TC = +110°C
°
–
–
0.5
mA
–
–
0.5
mA
IT = 10A
–
–
1.8
V
Gate Open
–
–
30
mA
DC Gate–Trigger Current
IGT
VD = 6VDC, RL = 60Ω
–
–
25
mA
DC Gate–Trigger Voltage
VGT
VD = 6VDC, RL = 60Ω
–
–
1.5
V
IGT = 100mA
–
2.5
–
µs
–
200
–
V/µs
Gate Controlled Turn–On Time
Critical Rate of Off–State Voltage
tgt
dv/dt Gate Open, TC = +100°C
(critical)
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
Isolated
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
.100 (2.54)
Gate
Anode