NTE NTE5558

NTE5550 thru NTE5558
Silicon Controlled Rectifiers
Description:
The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applications,
such as motor controls, heating controls and power supply crowbar circuits.
Features:
D Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability.
D Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation
and Durability.
D Blocking Voltage to 800 Volts
D 300A Surge Current Capability
Absolute Maximum Ratings:
Peak Reverse Blocking Voltage (Note 1), VRRM
NTE5550 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5552 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5554 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5556 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5558 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Forward Current (TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
(All Conduction Angles), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak Non–Repetitive Surge Current (8.3ms), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A
(1/2 Cycle, Sine Wave, 1.5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A
Forward Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Forward Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Note 1. VRRM for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking
voltage.
Electrical Characteristics: (TC = +25°C unless otherwise noted.)
Parameter
Symbol
Peak Forward Blocking Voltage, (TJ = +125°C)
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
Min
Typ Max Unit
VDRM
V
50
200
400
600
800
–
–
–
–
–
–
–
–
–
–
–
–
–
–
10
2
µA
mA
VTM
–
–
1.8
V
IGT
–
–
–
25
40
75
mA
Gate Trigger Voltage (Continuous DC)
(Anode Voltage = 12Vdc, RL = 100Ω, TC = –40°C)
VGT
–
1
1.5
V
Gate Non–Trigger Voltage
(Anode Voltage = Rated VDRM, RL =100Ω, TJ = +125°C)
VGD
0.2
–
–
V
Holding Current
(Anode Voltage = 12Vdc, TC = –40°C)
IH
–
35
40
mA
Turn–On Time
(ITM = 25A, IGT = 50mAdc)
tgt
–
1.5
2
µs
Turn–Off Time (VDRM = rated voltage)
(ITM =25A, IR = 25A)
(ITM =25A, IR = 25A, TJ = +125°C)
tq
–
–
15
35
–
–
–
50
–
Peak Forward or Reverse Blocking Current,
(Rated VDRM or VRRM)
TJ = +25°C
TJ = +125°C
IDRM, IRRM
Forward “ON” Voltage, (ITM = 50A, Note 2)
Gate Trigger Current (Continuous DC),
(Anode Voltage = 12Vdc, RL = 100Ω)
TC = +25°C
TC = –40°C
Critical Rate of Rise of Off–State Voltage
(Gate Open, Rated VDRM, Exponential Waveform)
dv/dt
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.070 (1.78) Max
.500
(12.7)
Min
Cathode
Gate
.100 (2.54)
Anode/Tab
µs
V/µs