NTE NTE594

NTE594
Silicon Diode, Bandswitch
Description:
The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended
for thick and thin–film circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage
VF
IF = 100mA
–
–
1.2
V
Reverse Current
IR
VR = 20V
–
–
100
nA
VR = 20V, TJ = 60°C
–
–
1
µA
Series Resistance
rD
IF = 5mA
–
0.5
0.7
Ω
Diode Capacitance
Cd
VR = 20V, f = 1MHz
–
0.8
1.0
pF
.016 (0.48)
K
A
.098
(2.5)
Max
N.C.
.037 (0.95)
.074 (1.9)
.051
(1.3)
.118 (3.0) Max
.043 (1.1)
.007 (0.2)